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Department薄膜光学技术研究室(十一室)
Correlation between 193nm absorption and photoluminescence-related defects for fused silica materials
Zhou, Jiangning1,2; Li, Bincheng1,3
Source PublicationOPTICAL MATERIALS EXPRESS
Volume8Issue:4Pages:775-784
2018-04-01
Language英语
ISSN2159-3930
DOI10.1364/OME.8.000775
Indexed BySCI ; Ei
WOS IDWOS:000428955700007
EI Accession Number20181104905361
SubtypeJ
AbstractWe reported on the study of the correlation between 193nm absorption under 1.5 similar to 5.0mJ/cm(2) fluence irradiation and photoluminescence (PL) related defects for deepultraviolet (DUV) fused silica samples with different H-2 and OH contents (0 similar to 1200ppm). Experimental results showed strong correlations between apparent nonlinear absorption at 193nm to 650nm PL band originated from a non-bridging oxygen hole center (NBOHC), and between apparent linear absorption at 193nm to 550nm PL band. In addition, only 650nm PL defects showed reversible concentration change under 193nm laser irradiation, indicating a possible link to the rapid damage process (RDP) under DUV irradiation. Experimental observation and theoretical calculations on the dependence of 650nm PL intensity on the laser fluence further demonstrated that the generation and annealing processes of NBOHC in these DUV fused silica samples are mainly due to two-photon excitation induced breakage of SiOH bond and combination of NBOHC with H-2. These results give new insight into the influence of NBOHC and SiOH on fused silica's DUV absorption and transmission properties, and therefore are helpful to the development of high-performance DUV fused silica materials. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
KeywordDefects Irradiation Laser excitation Photoluminescence Two photon processes
WOS KeywordOXYGEN HOLE-CENTERS ; BAND ; LUMINESCENCE ; GLASS ; EXCITATION ; NM ; UV
EI KeywordsDefects ; Irradiation ; Laser excitation ; Photoluminescence ; Two photon processes
EI Classification Number741.1 Light/Optics ; 744.9 Laser Applications ; 812.3 Glass ; 951 Materials Science
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/9328
Collection薄膜光学技术研究室(十一室)
Affiliation1.Institute of Optics and Electronics, Chinese Academy of Sciences, Shuangliu, Chengdu; 610209, China;
2.Graduate University of Chinese Academy of Sciences, Beijing; 100049, China;
3.School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu; 610054, China
Recommended Citation
GB/T 7714
Zhou, Jiangning,Li, Bincheng. Correlation between 193nm absorption and photoluminescence-related defects for fused silica materials[J]. OPTICAL MATERIALS EXPRESS,2018,8(4):775-784.
APA Zhou, Jiangning,&Li, Bincheng.(2018).Correlation between 193nm absorption and photoluminescence-related defects for fused silica materials.OPTICAL MATERIALS EXPRESS,8(4),775-784.
MLA Zhou, Jiangning,et al."Correlation between 193nm absorption and photoluminescence-related defects for fused silica materials".OPTICAL MATERIALS EXPRESS 8.4(2018):775-784.
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