| Department | 微细加工光学技术国家重点实验室（开放室） |
| An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques | |
| Yuan, Jing1,3; Luo, Jun1; Zhang, Ming1,2; Pu, Mingbo1; Li, Xiong1; Zhao, Zeyu1; Luo, Xiangang1 | |
| Source Publication | IEEE PHOTONICS JOURNAL
 |
| Volume | 10Issue:6Pages:5901010 |
| 2018-12-01 | |
| Language | 英语 |
| ISSN | 1943-0655 |
| DOI | 10.1109/JPHOT.2018.2882126 |
| Indexed By | SCI ; Ei |
| WOS ID | WOS:000452626800001 |
| EI Accession Number | 20184706116942 |
| Subtype | J |
| Abstract | Broadband absorber in the terahertz region (0.1-10 THz) has attracted considerable attentions due to its important applications in detecting, imaging, and electromagnetic stealth. Recently, terahertz absorber with broadband features has been widely investigated, however, the achievement of ultrabroad bandwidth is still challenging due to the limitations of complex structural design and fabrication processes. In this paper, an ultrabroadband terahertz absorber covering the entire terahertz regime (0.1-10 THz) based on the heavily doped silicon has been designed and fabricated, which is composed of double-layer binary gratings filled with the SU-8 photoresist. Antireflection techniques (SU-8 layer) were utilized to further promote the performance of the terahertz absorber at high frequencies through matching the impedance between free space and doped-silicon substrate. The measured absorption exceeding 87% within the frequency range of 0.3-10 THz has verified the proposed approach in designing the ultrabroadband terahertz absorber. Furthermore, the designed absorber remains high performance in the case of wide-angle incidence even up to 60 degrees. Benefiting from the simple structure, the absorber is easy to be fabricated by common optical lithography. We believe that the results of this paper could broaden the application areas of terahertz absorbers. |
| Keyword | Ultra-broadband terahertz absorber antireflection techniques |
| WOS Keyword | BROAD-BAND ; PERFECT ABSORBER |
| EI Keywords | Photoresists ; Silicon |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ioe.ac.cn/handle/181551/9283 |
| Collection | 微细加工光学技术国家重点实验室（开放室） |
| Affiliation | 1.State Key Laboratory of Optical Technologies for Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu; 610209, China; 2.Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing; 400044, China; 3.University of Chinese Academy of Sciences, Beijing; 100049, China |
| Recommended Citation GB/T 7714 | Yuan, Jing,Luo, Jun,Zhang, Ming,et al. An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques[J]. IEEE PHOTONICS JOURNAL,2018,10(6):5901010. |
| APA | Yuan, Jing.,Luo, Jun.,Zhang, Ming.,Pu, Mingbo.,Li, Xiong.,...&Luo, Xiangang.(2018).An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques.IEEE PHOTONICS JOURNAL,10(6),5901010. |
| MLA | Yuan, Jing,et al."An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques".IEEE PHOTONICS JOURNAL 10.6(2018):5901010. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2018-2050.pdf（3884KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | Application Full Text | |
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