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Department微细加工光学技术国家重点实验室(开放室)
An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques
Yuan, Jing1,3; Luo, Jun1; Zhang, Ming1,2; Pu, Mingbo1; Li, Xiong1; Zhao, Zeyu1; Luo, Xiangang1
Source PublicationIEEE PHOTONICS JOURNAL
Volume10Issue:6Pages:5901010
2018-12-01
Language英语
ISSN1943-0655
DOI10.1109/JPHOT.2018.2882126
Indexed BySCI ; Ei
WOS IDWOS:000452626800001
EI Accession Number20184706116942
SubtypeJ
AbstractBroadband absorber in the terahertz region (0.1-10 THz) has attracted considerable attentions due to its important applications in detecting, imaging, and electromagnetic stealth. Recently, terahertz absorber with broadband features has been widely investigated, however, the achievement of ultrabroad bandwidth is still challenging due to the limitations of complex structural design and fabrication processes. In this paper, an ultrabroadband terahertz absorber covering the entire terahertz regime (0.1-10 THz) based on the heavily doped silicon has been designed and fabricated, which is composed of double-layer binary gratings filled with the SU-8 photoresist. Antireflection techniques (SU-8 layer) were utilized to further promote the performance of the terahertz absorber at high frequencies through matching the impedance between free space and doped-silicon substrate. The measured absorption exceeding 87% within the frequency range of 0.3-10 THz has verified the proposed approach in designing the ultrabroadband terahertz absorber. Furthermore, the designed absorber remains high performance in the case of wide-angle incidence even up to 60 degrees. Benefiting from the simple structure, the absorber is easy to be fabricated by common optical lithography. We believe that the results of this paper could broaden the application areas of terahertz absorbers.
KeywordUltra-broadband terahertz absorber antireflection techniques
WOS KeywordBROAD-BAND ; PERFECT ABSORBER
EI KeywordsPhotoresists ; Silicon
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/9283
Collection微细加工光学技术国家重点实验室(开放室)
Affiliation1.State Key Laboratory of Optical Technologies for Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu; 610209, China;
2.Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing; 400044, China;
3.University of Chinese Academy of Sciences, Beijing; 100049, China
Recommended Citation
GB/T 7714
Yuan, Jing,Luo, Jun,Zhang, Ming,et al. An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques[J]. IEEE PHOTONICS JOURNAL,2018,10(6):5901010.
APA Yuan, Jing.,Luo, Jun.,Zhang, Ming.,Pu, Mingbo.,Li, Xiong.,...&Luo, Xiangang.(2018).An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques.IEEE PHOTONICS JOURNAL,10(6),5901010.
MLA Yuan, Jing,et al."An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques".IEEE PHOTONICS JOURNAL 10.6(2018):5901010.
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