IOE OpenIR  > 薄膜光学相机总体室
Department薄膜光学相机总体室
Gas Flow Simulation Research on Reaction Chamber of Reactive ion etching
Zhang Jingwen; Fan Bin; Li Zhiwei; Liu Xin; Li Bincheng; Han Yu; Gong Chang
Source PublicationProceedings of SPIE - 9TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES (AOMATT 2018): META-SURFACE-WAVE AND PLANAR OPTICS
Volume10841
Pages108410G
2018
Language英语
ISSN0277-786X
DOI10.1117/12.2512222
Indexed BySCI
WOS IDWOS:000461820700015
SubtypeC
AbstractGas flow distribution of reaction chamber of reactive ion etching (RIE) etcher is usually considered to be a main factor in determining both the plasma distribution and etching uniformity. Based on the continuum fluid and heat transfer models of the commercial software, Fluent(Ansys), the gas flow distribution of the reaction chamber was simulated. And then the spatial distribution profiles of the pressures above the electrode surface under the different mass flow (50 similar to 250sccm) inlet conditions , and the influence of the different GAP (L = 0.03 similar to 0.06m) of the chambers on the gas flow uniformity were discussed. The result shows that the pressure distribution above the electrode has the character which the pressure is higher in the center of the electrode and lower at the edge and increases with the rise of the mass flow of inlet. And the uniformity of the gas flow distribution is enhanced with the rise of the GAP of the chamber.
Keywordreactive ion etching Fluent(Ansys) numerical simulation pressure distribution
WOS KeywordLOW-PRESSURE ; UNIFORMITY ; OPTIMIZATION
Conference Name9th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT) - Meta-Surface-Wave and Planar Optics9th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT) - Meta-Surface-Wave and Planar Optics
Conference DateJUN 26-29, 2018JUN 26-29, 2018
Conference PlaceChengdu, PEOPLES R CHINAChengdu, PEOPLES R CHINA
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Document Type会议论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/9145
Collection薄膜光学相机总体室
Recommended Citation
GB/T 7714
Zhang Jingwen,Fan Bin,Li Zhiwei,et al. Gas Flow Simulation Research on Reaction Chamber of Reactive ion etching[C],2018:108410G.
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