Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system

	Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system
	Long, Guoyun; Zhang, Yaoping; Fan, Junqi
	2017
会议名称	Proceedings of SPIE: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016
会议录名称	0277-786X
卷号	10255
页码	102551B
摘要	High reflection films for 800nm picoseconds laser system requires broad bandwidth, which is usually about ±50nm, or even to ±70nm, and a high laser damage threshold is needed at the same time. Multilayer dielectrics using three materials Nb2O5/SiO2-HfO2/SiO2were fabricated by electron beam evaporation. Benefit from its high refractive index of Nb2O5and the high damage threshold of HfO2films, the multilayer dielectrics were prepared successfully, which have more than 99.5% reflectance within bandwidth larger than 140nm around the center wavelength of 800 nm. The laser damage characteristics of the films at 150ps, 1Hz were studied, and the damage mechanism was analyzed. © 2017 SPIE.
关键词	Bandwidth - Dielectric materials - Film preparation - Hafnium oxides - Multilayer films - Multilayers - Niobium oxide - Refractive index
收录类别	Ei
语种	英语
EI分类号	2017-2170
文献类型	会议论文
条目标识符	http://ir.ioe.ac.cn/handle/181551/9038
专题	自适应光学技术研究室（八室）
作者单位	Institute of Optics and Electronics, Chinese Academy of Science, Chengdu; 610209, China
推荐引用方式 GB/T 7714	Long, Guoyun,Zhang, Yaoping,Fan, Junqi. Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system[C],2017:102551B.

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