Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system | |
Long, Guoyun; Zhang, Yaoping; Fan, Junqi | |
Source Publication | 0277-786X |
Volume | 10255 |
Pages | 102551B |
2017 | |
Language | 英语 |
Indexed By | Ei |
Abstract | High reflection films for 800nm picoseconds laser system requires broad bandwidth, which is usually about ±50nm, or even to ±70nm, and a high laser damage threshold is needed at the same time. Multilayer dielectrics using three materials Nb2O5/SiO2-HfO2/SiO2were fabricated by electron beam evaporation. Benefit from its high refractive index of Nb2O5and the high damage threshold of HfO2films, the multilayer dielectrics were prepared successfully, which have more than 99.5% reflectance within bandwidth larger than 140nm around the center wavelength of 800 nm. The laser damage characteristics of the films at 150ps, 1Hz were studied, and the damage mechanism was analyzed. © 2017 SPIE. |
Keyword | Bandwidth - Dielectric materials - Film preparation - Hafnium oxides - Multilayer films - Multilayers - Niobium oxide - Refractive index |
Conference Name | Proceedings of SPIE: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016 |
EI Classification Number | 2017-2170 |
Document Type | 会议论文 |
Identifier | http://ir.ioe.ac.cn/handle/181551/9038 |
Collection | 自适应光学技术研究室(八室) |
Affiliation | Institute of Optics and Electronics, Chinese Academy of Science, Chengdu; 610209, China |
Recommended Citation GB/T 7714 | Long, Guoyun,Zhang, Yaoping,Fan, Junqi. Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system[C],2017:102551B. |
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2017-2170.pdf(536KB) | 会议论文 | 开放获取 | CC BY-NC-SA | Application Full Text |
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