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Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system
Long, Guoyun; Zhang, Yaoping; Fan, Junqi
2017
Conference NameProceedings of SPIE: Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016
Source Publication0277-786X
Volume10255
Pages102551B
AbstractHigh reflection films for 800nm picoseconds laser system requires broad bandwidth, which is usually about ±50nm, or even to ±70nm, and a high laser damage threshold is needed at the same time. Multilayer dielectrics using three materials Nb2O5/SiO2-HfO2/SiO2were fabricated by electron beam evaporation. Benefit from its high refractive index of Nb2O5and the high damage threshold of HfO2films, the multilayer dielectrics were prepared successfully, which have more than 99.5% reflectance within bandwidth larger than 140nm around the center wavelength of 800 nm. The laser damage characteristics of the films at 150ps, 1Hz were studied, and the damage mechanism was analyzed. © 2017 SPIE.
KeywordBandwidth - Dielectric materials - Film preparation - Hafnium oxides - Multilayer films - Multilayers - Niobium oxide - Refractive index
Indexed ByEi
Language英语
EI Classification Number2017-2170
Document Type会议论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/9038
Collection自适应光学技术研究室(八室)
AffiliationInstitute of Optics and Electronics, Chinese Academy of Science, Chengdu; 610209, China
Recommended Citation
GB/T 7714
Long, Guoyun,Zhang, Yaoping,Fan, Junqi. Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system[C],2017:102551B.
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