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The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth
Sun, Li1; Chen, Xiufang1; Yu, Wancheng1; Sun, Honggang2; Zhao, Xian1; Xu, Xiangang1; Yu, Fan3; Liu, Yunfeng3
2016
发表期刊RSC Advances
ISSN2046-2069
卷号6期号:103页码:100908-100915
文章类型J
摘要The exposed surfaces of the SiC substrate have a great influence on the epitaxial graphene growth and morphology and thus influence the properties of graphene-based microelectronic devices. In this work, the surface structures of the SiC substrate were determined by first principle theoretical calculations. Calculated surface energies suggested that the SiC step structure, forming on the H2etching procedure, would be reconstructed and self-ordering to expose the (1-106) facet. The inclined angle of 33.23° of the vicinal surface observed by Atomic Force Microscope (AFM) demonstrated the calculated results. The relationship between graphene growth and the surface Si-C bonding strength was revealed by calculating the formation energies of Si vacancies. Combined the calculated formation energies with Raman analysis, we concluded that the nucleation of graphene growth on the SiC substrate preferred to occur at step (1-106) surface rather than terrace (0001) surface. In addition, the single Si atom would facilitate the assembling of surface C atoms. The present theoretical and experimental work is helpful to optimize the technology of epitaxial graphene growth on the SiC substrate. © 2016 The Royal Society of Chemistry.
关键词Atomic Force Microscopy Interfacial Energy Microelectronics Silicon Silicon Carbide
DOI10.1039/c6ra21858j
收录类别SCI ; Ei
语种英语
项目资助者National Natural Science Foundation of China [513230013, 51402169, 51502076] ; Fundamental Research Funds for Natural Science of Shandong University [2014QY005] ; Shandong Provincial Natural Science Foundation, China [ZR2014BP005] ; China Postdoctoral Science Foundation [2013M530322]
WOS记录号WOS:000387427700030
引用统计
文献类型期刊论文
条目标识符http://ir.ioe.ac.cn/handle/181551/8490
专题轻量化中心
作者单位1. State Key Laboratory of Crystal Materials, Shandong University, Jinan
2.250199, China
3. School of Mechanical, Electrical and Information Engineering, Shandong University, Weihai
4.264209, China
5. Institute of Optics and Electronics, Chinese Academy of Science, Chengdu
6.610209, China
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GB/T 7714
Sun, Li,Chen, Xiufang,Yu, Wancheng,et al. The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth[J]. RSC Advances,2016,6(103):100908-100915.
APA Sun, Li.,Chen, Xiufang.,Yu, Wancheng.,Sun, Honggang.,Zhao, Xian.,...&Liu, Yunfeng.(2016).The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth.RSC Advances,6(103),100908-100915.
MLA Sun, Li,et al."The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth".RSC Advances 6.103(2016):100908-100915.
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