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The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth
Sun, Li1; Chen, Xiufang1; Yu, Wancheng1; Sun, Honggang2; Zhao, Xian1; Xu, Xiangang1; Yu, Fan3; Liu, Yunfeng3
Source PublicationRSC Advances
Volume6Issue:103Pages:100908-100915
2016
Language英语
ISSN2046-2069
DOI10.1039/c6ra21858j
SubtypeJ
AbstractThe exposed surfaces of the SiC substrate have a great influence on the epitaxial graphene growth and morphology and thus influence the properties of graphene-based microelectronic devices. In this work, the surface structures of the SiC substrate were determined by first principle theoretical calculations. Calculated surface energies suggested that the SiC step structure, forming on the H2etching procedure, would be reconstructed and self-ordering to expose the (1-106) facet. The inclined angle of 33.23° of the vicinal surface observed by Atomic Force Microscope (AFM) demonstrated the calculated results. The relationship between graphene growth and the surface Si-C bonding strength was revealed by calculating the formation energies of Si vacancies. Combined the calculated formation energies with Raman analysis, we concluded that the nucleation of graphene growth on the SiC substrate preferred to occur at step (1-106) surface rather than terrace (0001) surface. In addition, the single Si atom would facilitate the assembling of surface C atoms. The present theoretical and experimental work is helpful to optimize the technology of epitaxial graphene growth on the SiC substrate. © 2016 The Royal Society of Chemistry.
KeywordAtomic Force Microscopy Interfacial Energy Microelectronics Silicon Silicon Carbide
Indexed BySCI ; Ei
WOS IDWOS:000387427700030
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/8490
Collection轻量化中心
Affiliation1. State Key Laboratory of Crystal Materials, Shandong University, Jinan
2.250199, China
3. School of Mechanical, Electrical and Information Engineering, Shandong University, Weihai
4.264209, China
5. Institute of Optics and Electronics, Chinese Academy of Science, Chengdu
6.610209, China
Recommended Citation
GB/T 7714
Sun, Li,Chen, Xiufang,Yu, Wancheng,et al. The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth[J]. RSC Advances,2016,6(103):100908-100915.
APA Sun, Li.,Chen, Xiufang.,Yu, Wancheng.,Sun, Honggang.,Zhao, Xian.,...&Liu, Yunfeng.(2016).The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth.RSC Advances,6(103),100908-100915.
MLA Sun, Li,et al."The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth".RSC Advances 6.103(2016):100908-100915.
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