| Optimization of extremely broadband terahertz absorber based on multilayered doped silicon film | |
| Pu, M.B.; Hu, C.G.; Huang, C.; Wang, M.; Miao, Z.L.; Ma, X.L.; Wu, X.Y.; Luo, X.G. | |
| Volume | 5 |
| Pages | 1859-1861 |
| 2012 | |
| Language | 英语 |
| DOI | 10.1109/ICMMT.2012.6230427 |
| Indexed By | Ei |
| Subtype | 会议论文 |
| Abstract | We demonstrated numerically a multilayered broadband nearly perfect absorber in terahertz frequencies. The structure is composed of multilayered doped silicon film. Transfer matrix method and genetic algorithm are utilized to simulate and optimize the absorption property. The 20dB attenuation bandwidth of this structure is larger than 94%, while 40dB attenuation bandwidth is also larger than 50%. Compared with previous multilayered absorbers based on resistive metal, the structure proposed here shows better performance and is easier to fabricate. © 2012 IEEE.; We demonstrated numerically a multilayered broadband nearly perfect absorber in terahertz frequencies. The structure is composed of multilayered doped silicon film. Transfer matrix method and genetic algorithm are utilized to simulate and optimize the absorption property. The 20dB attenuation bandwidth of this structure is larger than 94%, while 40dB attenuation bandwidth is also larger than 50%. Compared with previous multilayered absorbers based on resistive metal, the structure proposed here shows better performance and is easier to fabricate. © 2012 IEEE. |
| Conference Name | 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings |
| Conference Date | 2012 |
| Citation statistics | |
| Document Type | 会议论文 |
| Identifier | http://ir.ioe.ac.cn/handle/181551/7887 |
| Collection | 微细加工光学技术国家重点实验室（开放室） |
| Corresponding Author | Pu, M.B. |
| Affiliation | State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China |
| Recommended Citation GB/T 7714 | Pu, M.B.,Hu, C.G.,Huang, C.,et al. Optimization of extremely broadband terahertz absorber based on multilayered doped silicon film[C],2012:1859-1861. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012-2058.pdf（876KB） | 会议论文 | 开放获取 | CC BY-NC-SA | Application Full Text | ||
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