| 题名: | Optimization of extremely broadband terahertz absorber based on multilayered doped silicon film |
| 作者: | Pu, M.B.; Hu, C.G.; Huang, C.; Wang, M.; Miao, Z.L.; Ma, X.L.; Wu, X.Y.; Luo, X.G.
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| 出版日期: | 2012
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| 会议名称: | 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
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| 会议日期: | 2012
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| DOI: | 10.1109/ICMMT.2012.6230427
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| 通讯作者: | Pu, M.B.
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| 中文摘要: | We demonstrated numerically a multilayered broadband nearly perfect absorber in terahertz frequencies. The structure is composed of multilayered doped silicon film. Transfer matrix method and genetic algorithm are utilized to simulate and optimize the absorption property. The 20dB attenuation bandwidth of this structure is larger than 94%, while 40dB attenuation bandwidth is also larger than 50%. Compared with previous multilayered absorbers based on resistive metal, the structure proposed here shows better performance and is easier to fabricate. © 2012 IEEE. |
| 英文摘要: | We demonstrated numerically a multilayered broadband nearly perfect absorber in terahertz frequencies. The structure is composed of multilayered doped silicon film. Transfer matrix method and genetic algorithm are utilized to simulate and optimize the absorption property. The 20dB attenuation bandwidth of this structure is larger than 94%, while 40dB attenuation bandwidth is also larger than 50%. Compared with previous multilayered absorbers based on resistive metal, the structure proposed here shows better performance and is easier to fabricate. © 2012 IEEE. |
| 收录类别: | Ei
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| 语种: | 英语
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| 卷号: | 5
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| 文章类型: | 会议论文
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| 页码: | 1859-1861
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| 内容类型: | 会议论文
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| URI标识: | http://ir.ioe.ac.cn/handle/181551/7887
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| Appears in Collections: | 微细加工光学技术国家重点实验室（开放室）_会议论文
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| 2012-2058.pdf（876KB） | 会议论文 | -- | 限制开放 | | View
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作者单位: | State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China
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| Recommended Citation: | |
Pu, M.B.,Hu, C.G.,Huang, C.,et al. Optimization of extremely broadband terahertz absorber based on multilayered doped silicon film[C]. 见:2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings. 2012.
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