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Optimization of extremely broadband terahertz absorber based on multilayered doped silicon film
Pu, M.B.; Hu, C.G.; Huang, C.; Wang, M.; Miao, Z.L.; Ma, X.L.; Wu, X.Y.; Luo, X.G.
Volume5
Pages1859-1861
2012
Language英语
DOI10.1109/ICMMT.2012.6230427
Indexed ByEi
Subtype会议论文
AbstractWe demonstrated numerically a multilayered broadband nearly perfect absorber in terahertz frequencies. The structure is composed of multilayered doped silicon film. Transfer matrix method and genetic algorithm are utilized to simulate and optimize the absorption property. The 20dB attenuation bandwidth of this structure is larger than 94%, while 40dB attenuation bandwidth is also larger than 50%. Compared with previous multilayered absorbers based on resistive metal, the structure proposed here shows better performance and is easier to fabricate. © 2012 IEEE.; We demonstrated numerically a multilayered broadband nearly perfect absorber in terahertz frequencies. The structure is composed of multilayered doped silicon film. Transfer matrix method and genetic algorithm are utilized to simulate and optimize the absorption property. The 20dB attenuation bandwidth of this structure is larger than 94%, while 40dB attenuation bandwidth is also larger than 50%. Compared with previous multilayered absorbers based on resistive metal, the structure proposed here shows better performance and is easier to fabricate. © 2012 IEEE.
Conference Name2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
Conference Date2012
Citation statistics
Document Type会议论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/7887
Collection微细加工光学技术国家重点实验室(开放室)
Corresponding AuthorPu, M.B.
Affiliation State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China
Recommended Citation
GB/T 7714
Pu, M.B.,Hu, C.G.,Huang, C.,et al. Optimization of extremely broadband terahertz absorber based on multilayered doped silicon film[C],2012:1859-1861.
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