中国科学院光电技术研究所机构知识库
Advanced  
IOE OpenIR  > 薄膜光学技术研究室(十一室)  > 会议论文
题名:
Analysis of enhanced photocarrier radiometry signals for ion-implanted and annealed silicon wafers
作者: Liu, Xianming1,2; Li, Bincheng2; Huang, Qiuping2
出版日期: 2012
会议名称: International Journal of Thermophysics
会议日期: 2012
DOI: 10.1007/s10765-012-1283-0
通讯作者: Li, B. (bcli@ioe.ac.cn)
中文摘要: It is experimentally observed that the photocarrier radiometry (PCR) signals of silicon wafers are greatly enhanced by ion implantation and thermal annealing. A two-layer theoretical model is employed to analyze the experimental observation in detail. Theoretical simulations indicate that the increased optical-to-electronic quantum efficiency of the implanted layer could be the main photoluminescence mechanism contributing to the PCR signal enhancement. The decreased surface recombination velocity induced by surface electric field and the change of electronic transport properties of the implanted layer also contribute to the signal enhancement. © 2012 Springer Science+Business Media, LLC.
英文摘要: It is experimentally observed that the photocarrier radiometry (PCR) signals of silicon wafers are greatly enhanced by ion implantation and thermal annealing. A two-layer theoretical model is employed to analyze the experimental observation in detail. Theoretical simulations indicate that the increased optical-to-electronic quantum efficiency of the implanted layer could be the main photoluminescence mechanism contributing to the PCR signal enhancement. The decreased surface recombination velocity induced by surface electric field and the change of electronic transport properties of the implanted layer also contribute to the signal enhancement. © 2012 Springer Science+Business Media, LLC.
收录类别: Ei
语种: 英语
卷号: 33
ISSN号: 0195928X
文章类型: 会议论文
页码: 2089-2094
Citation statistics:
内容类型: 会议论文
URI标识: http://ir.ioe.ac.cn/handle/181551/7855
Appears in Collections:薄膜光学技术研究室(十一室)_会议论文

Files in This Item:
File Name/ File Size Content Type Version Access License
2012-2064.pdf(203KB)会议论文--限制开放View 联系获取全文

作者单位: 1. Key Laboratory of Optoelectronic Technology and System of Educational, Ministry of China, Chongqing University, Chongqing 400044, China
2. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu 610209 Sichuan, China

Recommended Citation:
Liu, Xianming,Li, Bincheng,Huang, Qiuping. Analysis of enhanced photocarrier radiometry signals for ion-implanted and annealed silicon wafers[C]. 见:International Journal of Thermophysics. 2012.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Liu, Xianming]'s Articles
[Li, Bincheng]'s Articles
[Huang, Qiuping]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Liu, Xianming]‘s Articles
[Li, Bincheng]‘s Articles
[Huang, Qiuping]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: 2012-2064.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Copyright © 2007-2016  中国科学院光电技术研究所 - Feedback
Powered by CSpace