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Analysis of enhanced photocarrier radiometry signals for ion-implanted and annealed silicon wafers
Liu, Xianming1,2; Li, Bincheng2; Huang, Qiuping2; Li, B. (bcli@ioe.ac.cn)
Volume33
Pages2089-2094
2012
Language英语
ISSN0195928X
DOI10.1007/s10765-012-1283-0
Indexed ByEi
Subtype会议论文
AbstractIt is experimentally observed that the photocarrier radiometry (PCR) signals of silicon wafers are greatly enhanced by ion implantation and thermal annealing. A two-layer theoretical model is employed to analyze the experimental observation in detail. Theoretical simulations indicate that the increased optical-to-electronic quantum efficiency of the implanted layer could be the main photoluminescence mechanism contributing to the PCR signal enhancement. The decreased surface recombination velocity induced by surface electric field and the change of electronic transport properties of the implanted layer also contribute to the signal enhancement. © 2012 Springer Science+Business Media, LLC.; It is experimentally observed that the photocarrier radiometry (PCR) signals of silicon wafers are greatly enhanced by ion implantation and thermal annealing. A two-layer theoretical model is employed to analyze the experimental observation in detail. Theoretical simulations indicate that the increased optical-to-electronic quantum efficiency of the implanted layer could be the main photoluminescence mechanism contributing to the PCR signal enhancement. The decreased surface recombination velocity induced by surface electric field and the change of electronic transport properties of the implanted layer also contribute to the signal enhancement. © 2012 Springer Science+Business Media, LLC.
Conference NameInternational Journal of Thermophysics
Conference Date2012
Citation statistics
Document Type会议论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/7855
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorLi, B. (bcli@ioe.ac.cn)
Affiliation1. Key Laboratory of Optoelectronic Technology and System of Educational, Ministry of China, Chongqing University, Chongqing 400044, China
2. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu 610209 Sichuan, China
Recommended Citation
GB/T 7714
Liu, Xianming,Li, Bincheng,Huang, Qiuping,et al. Analysis of enhanced photocarrier radiometry signals for ion-implanted and annealed silicon wafers[C],2012:2089-2094.
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