| 题名: | Characterization of arsenic ultra-shallow junctions in silicon using photocarrier radiometry and spectroscopic ellipsometry |
| 作者: | Huang, Qiuping1,2; Li, Bincheng1; Gao, Weidong1
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| 出版日期: | 2012
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| 会议名称: | International Journal of Thermophysics
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| 会议日期: | 2012
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| DOI: | 10.1007/s10765-012-1284-z
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| 通讯作者: | Li, B. (bcli@ioe.ac.cn)
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| 中文摘要: | Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm 2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. © 2012 Springer Science+Business Media, LLC. |
| 英文摘要: | Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm 2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. © 2012 Springer Science+Business Media, LLC. |
| 收录类别: | Ei
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| 语种: | 英语
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| 卷号: | 33
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| ISSN号: | 0195928X
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| 文章类型: | 会议论文
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| 页码: | 2082-2088
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| Citation statistics: |
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| 内容类型: | 会议论文
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| URI标识: | http://ir.ioe.ac.cn/handle/181551/7853
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| Appears in Collections: | 薄膜光学技术研究室（十一室）_会议论文
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| 2012-2062.pdf（298KB） | 会议论文 | -- | 限制开放 | | View
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作者单位: | 1. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu 610209 Sichuan, China
2. Graduate School of the Chinese Academy of Sciences, Beijing 100039, China
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| Recommended Citation: | |
Huang, Qiuping,Li, Bincheng,Gao, Weidong. Characterization of arsenic ultra-shallow junctions in silicon using photocarrier radiometry and spectroscopic ellipsometry[C]. 见:International Journal of Thermophysics. 2012.
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