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题名:
Characterization of arsenic ultra-shallow junctions in silicon using photocarrier radiometry and spectroscopic ellipsometry
作者: Huang, Qiuping1,2; Li, Bincheng1; Gao, Weidong1
出版日期: 2012
会议名称: International Journal of Thermophysics
会议日期: 2012
DOI: 10.1007/s10765-012-1284-z
通讯作者: Li, B. (bcli@ioe.ac.cn)
中文摘要: Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm 2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. © 2012 Springer Science+Business Media, LLC.
英文摘要: Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm 2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. © 2012 Springer Science+Business Media, LLC.
收录类别: Ei
语种: 英语
卷号: 33
ISSN号: 0195928X
文章类型: 会议论文
页码: 2082-2088
Citation statistics:
内容类型: 会议论文
URI标识: http://ir.ioe.ac.cn/handle/181551/7853
Appears in Collections:薄膜光学技术研究室(十一室)_会议论文

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作者单位: 1. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu 610209 Sichuan, China
2. Graduate School of the Chinese Academy of Sciences, Beijing 100039, China

Recommended Citation:
Huang, Qiuping,Li, Bincheng,Gao, Weidong. Characterization of arsenic ultra-shallow junctions in silicon using photocarrier radiometry and spectroscopic ellipsometry[C]. 见:International Journal of Thermophysics. 2012.
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