| Characterization of arsenic ultra-shallow junctions in silicon using photocarrier radiometry and spectroscopic ellipsometry | |
| Huang, Qiuping1,2; Li, Bincheng1; Gao, Weidong1; Li, B. (bcli@ioe.ac.cn) | |
| Volume | 33 |
| Pages | 2082-2088 |
| 2012 | |
| Language | 英语 |
| ISSN | 0195928X |
| DOI | 10.1007/s10765-012-1284-z |
| Indexed By | Ei |
| Subtype | 会议论文 |
| Abstract | Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm 2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. © 2012 Springer Science+Business Media, LLC.; Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm 2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. © 2012 Springer Science+Business Media, LLC. |
| Conference Name | International Journal of Thermophysics |
| Conference Date | 2012 |
| Citation statistics | |
| Document Type | 会议论文 |
| Identifier | http://ir.ioe.ac.cn/handle/181551/7853 |
| Collection | 薄膜光学技术研究室（十一室） |
| Corresponding Author | Li, B. (bcli@ioe.ac.cn) |
| Affiliation | 1. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu 610209 Sichuan, China 2. Graduate School of the Chinese Academy of Sciences, Beijing 100039, China |
| Recommended Citation GB/T 7714 | Huang, Qiuping,Li, Bincheng,Gao, Weidong,et al. Characterization of arsenic ultra-shallow junctions in silicon using photocarrier radiometry and spectroscopic ellipsometry[C],2012:2082-2088. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012-2062.pdf（298KB） | 会议论文 | 开放获取 | CC BY-NC-SA | Application Full Text | ||
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