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Characterization of arsenic ultra-shallow junctions in silicon using photocarrier radiometry and spectroscopic ellipsometry
Huang, Qiuping1,2; Li, Bincheng1; Gao, Weidong1; Li, B. (bcli@ioe.ac.cn)
Volume33
Pages2082-2088
2012
Language英语
ISSN0195928X
DOI10.1007/s10765-012-1284-z
Indexed ByEi
Subtype会议论文
AbstractPhotocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm 2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. © 2012 Springer Science+Business Media, LLC.; Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 × 1015 As+/cm 2 and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 μm to 20 μm. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication. © 2012 Springer Science+Business Media, LLC.
Conference NameInternational Journal of Thermophysics
Conference Date2012
Citation statistics
Document Type会议论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/7853
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorLi, B. (bcli@ioe.ac.cn)
Affiliation1. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu 610209 Sichuan, China
2. Graduate School of the Chinese Academy of Sciences, Beijing 100039, China
Recommended Citation
GB/T 7714
Huang, Qiuping,Li, Bincheng,Gao, Weidong,et al. Characterization of arsenic ultra-shallow junctions in silicon using photocarrier radiometry and spectroscopic ellipsometry[C],2012:2082-2088.
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