| Preferential sputtering of Ar ion processing SiO2 mirror | |
| Duan, Guping1,2; Xing, Tingwen1; Li, Yun1,2; Duan, G. | |
| Volume | 8416 |
| Pages | 84162L |
| 2012 | |
| Language | 英语 |
| ISSN | 0277786X |
| DOI | 10.1117/12.973697 |
| Indexed By | Ei |
| Subtype | 会议论文 |
| Abstract | In the optical processing, ion beam processing has been used widely for the advantages of highly-precision, less pollution and no stress and distortion. In order to analysis the preferential sputtering phenomenon, that Ar ion processing SiO2 mirror is considered as an example, which is commonly done in ion beam processing. In order to improve the processing precision, the influence of Ar ion incident angle and incident energy on SiO2 sputtering yield is analyzed in the case of considering the preferential sputtering phenomenon. By using the TRIM 2008 software, the sputtering situation of two elements of Si and O are simulated. The sputtering yield rate of the two elements is always a certain proportion, and the ratio is not related with the incident angle and it almost stays the same in a certain energy range. So, the SiO2 can be thought as a whole when considering its sputtering yield, which equals to the sum of Si and O sputtering yield. © 2012 SPIE.; In the optical processing, ion beam processing has been used widely for the advantages of highly-precision, less pollution and no stress and distortion. In order to analysis the preferential sputtering phenomenon, that Ar ion processing SiO2 mirror is considered as an example, which is commonly done in ion beam processing. In order to improve the processing precision, the influence of Ar ion incident angle and incident energy on SiO2 sputtering yield is analyzed in the case of considering the preferential sputtering phenomenon. By using the TRIM 2008 software, the sputtering situation of two elements of Si and O are simulated. The sputtering yield rate of the two elements is always a certain proportion, and the ratio is not related with the incident angle and it almost stays the same in a certain energy range. So, the SiO2 can be thought as a whole when considering its sputtering yield, which equals to the sum of Si and O sputtering yield. © 2012 SPIE. |
| Conference Name | Proceedings of SPIE: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies |
| Conference Date | 2012 |
| Citation statistics | |
| Document Type | 会议论文 |
| Identifier | http://ir.ioe.ac.cn/handle/181551/7768 |
| Collection | 自适应光学技术研究室（八室） |
| Corresponding Author | Duan, G. |
| Affiliation | 1. Research Laboratory of Applied Optics, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China 2. Graduate School, Chinese Academy of Sciences, Beijing 100039, China |
| Recommended Citation GB/T 7714 | Duan, Guping,Xing, Tingwen,Li, Yun,et al. Preferential sputtering of Ar ion processing SiO2 mirror[C],2012:84162L. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012-2073.pdf（279KB） | 会议论文 | 开放获取 | CC BY-NC-SA | Application Full Text | ||
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