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Preferential sputtering of Ar ion processing SiO2 mirror
Duan, Guping1,2; Xing, Tingwen1; Li, Yun1,2; Duan, G.
Volume8416
Pages84162L
2012
Language英语
ISSN0277786X
DOI10.1117/12.973697
Indexed ByEi
Subtype会议论文
AbstractIn the optical processing, ion beam processing has been used widely for the advantages of highly-precision, less pollution and no stress and distortion. In order to analysis the preferential sputtering phenomenon, that Ar ion processing SiO2 mirror is considered as an example, which is commonly done in ion beam processing. In order to improve the processing precision, the influence of Ar ion incident angle and incident energy on SiO2 sputtering yield is analyzed in the case of considering the preferential sputtering phenomenon. By using the TRIM 2008 software, the sputtering situation of two elements of Si and O are simulated. The sputtering yield rate of the two elements is always a certain proportion, and the ratio is not related with the incident angle and it almost stays the same in a certain energy range. So, the SiO2 can be thought as a whole when considering its sputtering yield, which equals to the sum of Si and O sputtering yield. © 2012 SPIE.; In the optical processing, ion beam processing has been used widely for the advantages of highly-precision, less pollution and no stress and distortion. In order to analysis the preferential sputtering phenomenon, that Ar ion processing SiO2 mirror is considered as an example, which is commonly done in ion beam processing. In order to improve the processing precision, the influence of Ar ion incident angle and incident energy on SiO2 sputtering yield is analyzed in the case of considering the preferential sputtering phenomenon. By using the TRIM 2008 software, the sputtering situation of two elements of Si and O are simulated. The sputtering yield rate of the two elements is always a certain proportion, and the ratio is not related with the incident angle and it almost stays the same in a certain energy range. So, the SiO2 can be thought as a whole when considering its sputtering yield, which equals to the sum of Si and O sputtering yield. © 2012 SPIE.
Conference NameProceedings of SPIE: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Conference Date2012
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type会议论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/7768
Collection自适应光学技术研究室(八室)
Corresponding AuthorDuan, G.
Affiliation1. Research Laboratory of Applied Optics, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China
2. Graduate School, Chinese Academy of Sciences, Beijing 100039, China
Recommended Citation
GB/T 7714
Duan, Guping,Xing, Tingwen,Li, Yun,et al. Preferential sputtering of Ar ion processing SiO2 mirror[C],2012:84162L.
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