| 题名: | Preferential sputtering of Ar ion processing SiO2 mirror |
| 作者: | Duan, Guping1,2; Xing, Tingwen1; Li, Yun1,2
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| 出版日期: | 2012
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| 会议名称: | Proceedings of SPIE: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
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| 会议日期: | 2012
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| DOI: | 10.1117/12.973697
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| 通讯作者: | Duan, G.
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| 中文摘要: | In the optical processing, ion beam processing has been used widely for the advantages of highly-precision, less pollution and no stress and distortion. In order to analysis the preferential sputtering phenomenon, that Ar ion processing SiO2 mirror is considered as an example, which is commonly done in ion beam processing. In order to improve the processing precision, the influence of Ar ion incident angle and incident energy on SiO2 sputtering yield is analyzed in the case of considering the preferential sputtering phenomenon. By using the TRIM 2008 software, the sputtering situation of two elements of Si and O are simulated. The sputtering yield rate of the two elements is always a certain proportion, and the ratio is not related with the incident angle and it almost stays the same in a certain energy range. So, the SiO2 can be thought as a whole when considering its sputtering yield, which equals to the sum of Si and O sputtering yield. © 2012 SPIE. |
| 英文摘要: | In the optical processing, ion beam processing has been used widely for the advantages of highly-precision, less pollution and no stress and distortion. In order to analysis the preferential sputtering phenomenon, that Ar ion processing SiO2 mirror is considered as an example, which is commonly done in ion beam processing. In order to improve the processing precision, the influence of Ar ion incident angle and incident energy on SiO2 sputtering yield is analyzed in the case of considering the preferential sputtering phenomenon. By using the TRIM 2008 software, the sputtering situation of two elements of Si and O are simulated. The sputtering yield rate of the two elements is always a certain proportion, and the ratio is not related with the incident angle and it almost stays the same in a certain energy range. So, the SiO2 can be thought as a whole when considering its sputtering yield, which equals to the sum of Si and O sputtering yield. © 2012 SPIE. |
| 收录类别: | Ei
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| 语种: | 英语
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| 卷号: | 8416
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| ISSN号: | 0277786X
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| 文章类型: | 会议论文
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| 页码: | 84162L
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| Citation statistics: |
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| 内容类型: | 会议论文
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| URI标识: | http://ir.ioe.ac.cn/handle/181551/7768
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| Appears in Collections: | 自适应光学技术研究室（八室）_会议论文
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| 2012-2073.pdf（279KB） | 会议论文 | -- | 限制开放 | | View
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作者单位: | 1. Research Laboratory of Applied Optics, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China
2. Graduate School, Chinese Academy of Sciences, Beijing 100039, China
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| Recommended Citation: | |
Duan, Guping,Xing, Tingwen,Li, Yun. Preferential sputtering of Ar ion processing SiO2 mirror[C]. 见:Proceedings of SPIE: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies. 2012.
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