| 题名: | Source optimization using simulated annealing algorithm |
| 作者: | Jiang, Haibo1,2; Xing, Tingwen1; Du, Meng1,2
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| 出版日期: | 2014
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| 会议名称: | Proceedings of SPIE: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment
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| 会议日期: | 2014
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| 学科分类: | Algorithms - Image quality - Manufacture - Optical testing - Simulated annealing
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| DOI: | 10.1117/12.2069398
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| 中文摘要: | As lithography still pushing toward to lower k1 imaging, traditional illumination source shapes may perform marginally in resolving complex layouts, freeform source shapes are expected to achieve better image quality. Illumination optimization as one of inverse lithography techniques attempts to synthesize the input source which leads to the desired output wafer pattern by inverting the forward model from mask to wafer. This paper proposes a method to optimize illumination by using simulated annealing algorithms (SA). A synthesis of the NILS values at multi-critical mask locations over a focus range is chose as the merit function. The advantage of the SA algorithm is that it can identify optimum source solutions without any additional apriori knowledge about lithographic processes. The results show that our method can provide great improvements in both image quality and DOF. © 2014 SPIE. |
| 英文摘要: | As lithography still pushing toward to lower k1 imaging, traditional illumination source shapes may perform marginally in resolving complex layouts, freeform source shapes are expected to achieve better image quality. Illumination optimization as one of inverse lithography techniques attempts to synthesize the input source which leads to the desired output wafer pattern by inverting the forward model from mask to wafer. This paper proposes a method to optimize illumination by using simulated annealing algorithms (SA). A synthesis of the NILS values at multi-critical mask locations over a focus range is chose as the merit function. The advantage of the SA algorithm is that it can identify optimum source solutions without any additional apriori knowledge about lithographic processes. The results show that our method can provide great improvements in both image quality and DOF. © 2014 SPIE. |
| 收录类别: | Ei
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| 语种: | 英语
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| 卷号: | 9282
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| ISSN号: | 0277786X
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| 文章类型: | 会议论文
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| 页码: | 928239
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| Citation statistics: |
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| 内容类型: | 会议论文
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| URI标识: | http://ir.ioe.ac.cn/handle/181551/7493
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| Appears in Collections: | 应用光学研究室（二室）_会议论文
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作者单位: | 1. Lab of Applied Optics, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China
2. Graduate School of the Chinese Academy of Sciences, Beijing, China
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| Recommended Citation: | |
Jiang, Haibo,Xing, Tingwen,Du, Meng. Source optimization using simulated annealing algorithm[C]. 见:Proceedings of SPIE: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment. 2014.
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