| 题名: | Research development of thermal aberration in 193nm lithography exposure system |
| 作者: | Wang, Yueqiang1,2; Liu, Yong2
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| 出版日期: | 2014
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| 会议名称: | Proceedings of SPIE: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design Manufacturing, and Testing of Micro- and Nano-Optical Devices, and Systems
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| 会议日期: | 2014
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| 学科分类: | Bar codes - Design - Integrated circuit manufacture - Microelectronics - Optical devices
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| DOI: | 10.1117/12.2069700
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| 中文摘要: | Lithographic exposure is the key process in the manufacture of the integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. Nowadays, the 193nm ArF immersion exposure tool is widely used by the IC manufacturer. With the uniformity of critical dimension (CDU) and overlay become tighter and the requirement for throughput become higher, the thermal aberration caused by lens material and structure absorbing the laser energy cannot be neglected. In this paper, we introduce the efforts and methods that researcher on thermal aberration and its control. Further, these methods were compared to show their own pros and cons. Finally we investigated the challenges of thermal aberration control for state of the art technologies. © 2014 SPIE. |
| 英文摘要: | Lithographic exposure is the key process in the manufacture of the integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. Nowadays, the 193nm ArF immersion exposure tool is widely used by the IC manufacturer. With the uniformity of critical dimension (CDU) and overlay become tighter and the requirement for throughput become higher, the thermal aberration caused by lens material and structure absorbing the laser energy cannot be neglected. In this paper, we introduce the efforts and methods that researcher on thermal aberration and its control. Further, these methods were compared to show their own pros and cons. Finally we investigated the challenges of thermal aberration control for state of the art technologies. © 2014 SPIE. |
| 收录类别: | Ei
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| 语种: | 英语
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| 卷号: | 9283
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| ISSN号: | 0277786X
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| 文章类型: | 会议论文
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| 页码: | 928314
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| Citation statistics: |
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| 内容类型: | 会议论文
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| URI标识: | http://ir.ioe.ac.cn/handle/181551/7488
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| Appears in Collections: | 应用光学研究室（二室）_会议论文
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| 2014-2104.pdf（574KB） | 会议论文 | -- | 限制开放 | | View
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作者单位: | 1. Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China
2. University of Electronic Science and Technology of China, Chengdu, China
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| Recommended Citation: | |
Wang, Yueqiang,Liu, Yong. Research development of thermal aberration in 193nm lithography exposure system[C]. 见:Proceedings of SPIE: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design Manufacturing, and Testing of Micro- and Nano-Optical Devices, and Systems. 2014.
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