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Research development of thermal aberration in 193nm lithography exposure system
Wang, Yueqiang1,2; Liu, Yong2
Volume9283
Pages928314
2014
Language英语
ISSN0277786X
DOI10.1117/12.2069700
Indexed ByEi
Subtype会议论文
AbstractLithographic exposure is the key process in the manufacture of the integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. Nowadays, the 193nm ArF immersion exposure tool is widely used by the IC manufacturer. With the uniformity of critical dimension (CDU) and overlay become tighter and the requirement for throughput become higher, the thermal aberration caused by lens material and structure absorbing the laser energy cannot be neglected. In this paper, we introduce the efforts and methods that researcher on thermal aberration and its control. Further, these methods were compared to show their own pros and cons. Finally we investigated the challenges of thermal aberration control for state of the art technologies. © 2014 SPIE.; Lithographic exposure is the key process in the manufacture of the integrated circuit, and the performance of exposure system decides the level of microelectronic manufacture technology. Nowadays, the 193nm ArF immersion exposure tool is widely used by the IC manufacturer. With the uniformity of critical dimension (CDU) and overlay become tighter and the requirement for throughput become higher, the thermal aberration caused by lens material and structure absorbing the laser energy cannot be neglected. In this paper, we introduce the efforts and methods that researcher on thermal aberration and its control. Further, these methods were compared to show their own pros and cons. Finally we investigated the challenges of thermal aberration control for state of the art technologies. © 2014 SPIE.
Conference NameProceedings of SPIE: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design Manufacturing, and Testing of Micro- and Nano-Optical Devices, and Systems
Conference Date2014
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type会议论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/7488
Collection应用光学研究室(二室)
Affiliation1. Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China
2. University of Electronic Science and Technology of China, Chengdu, China
Recommended Citation
GB/T 7714
Wang, Yueqiang,Liu, Yong. Research development of thermal aberration in 193nm lithography exposure system[C],2014:928314.
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