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题名:
Illumination optimization in optical projective lithography
作者: Jiang, Hai-Bo1,2; Xing, Ting-Wen1; Du, Meng1,2; Chen, An1,2
出版日期: 2013
会议名称: Proceedings of SPIE: International Symposium on Photoelectronic Detection and Imaging 2013: Micro/Nano Optical Imaging Technologies and Applications
会议日期: 2013
学科分类: Numerical methods - Optimization - Photolithography
DOI: 10.1117/12.2034697
中文摘要: As lithography still pushing toward to lower K1 imaging, traditional illumination source shapes may perform marginally in resolving complex layouts, freeform source shapes are expected to achieve better image quality. Illumination optimization as one of inverse lithography techniques attempts to synthesize the input source which leads to the desired output wafer pattern by inverting the forward model from mask to wafer. Usually, inverse lithography problem could be solved by standard numerical methods. Recently, a set of gradient-based numerical methods have been developed to solve the mask optimization problem based on Hopkins' approach. In this study, the same method is also applied to resolve the illumination optimization but based on Abbe imaging formulation for partially coherent illumination. Firstly we state a pixel-based source representation, and analyze the constraint condition for source intensity. Secondly, we propose an objective function which includes three aspects: image fidelity, source smoothness and discretization penalty. Image fidelity is to ensure that the image is as close to the given mask as possible. Source smoothness and discretization penalty are to decrease the source complexity. All of the three items could be described mathematically. Thirdly, we describe the detailed optimization flow, and present the advantages of using Abbe imaging formulation as calculation mode of light intensity. Finally, some simulations were done with initial conventional illumination for 90nm isolated, dense and elbow features separately. As a result, we get irregular dipole source shapes for isolated and dense pattern, and irregular quadrupole for elbow pattern. The results also show that our method could provide great improvements in both image fidelity and source complexity. © 2013 SPIE.
英文摘要: As lithography still pushing toward to lower K1 imaging, traditional illumination source shapes may perform marginally in resolving complex layouts, freeform source shapes are expected to achieve better image quality. Illumination optimization as one of inverse lithography techniques attempts to synthesize the input source which leads to the desired output wafer pattern by inverting the forward model from mask to wafer. Usually, inverse lithography problem could be solved by standard numerical methods. Recently, a set of gradient-based numerical methods have been developed to solve the mask optimization problem based on Hopkins' approach. In this study, the same method is also applied to resolve the illumination optimization but based on Abbe imaging formulation for partially coherent illumination. Firstly we state a pixel-based source representation, and analyze the constraint condition for source intensity. Secondly, we propose an objective function which includes three aspects: image fidelity, source smoothness and discretization penalty. Image fidelity is to ensure that the image is as close to the given mask as possible. Source smoothness and discretization penalty are to decrease the source complexity. All of the three items could be described mathematically. Thirdly, we describe the detailed optimization flow, and present the advantages of using Abbe imaging formulation as calculation mode of light intensity. Finally, some simulations were done with initial conventional illumination for 90nm isolated, dense and elbow features separately. As a result, we get irregular dipole source shapes for isolated and dense pattern, and irregular quadrupole for elbow pattern. The results also show that our method could provide great improvements in both image fidelity and source complexity. © 2013 SPIE.
收录类别: Ei
语种: 英语
卷号: 8911
ISSN号: 0277786X
文章类型: 会议论文
页码: 89110R
Citation statistics:
内容类型: 会议论文
URI标识: http://ir.ioe.ac.cn/handle/181551/7484
Appears in Collections:应用光学研究室(二室)_会议论文

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作者单位: 1. Lab of applied optics, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China
2. Graduate School of the Chinese Academy of Sciences, Beijing 100039, China

Recommended Citation:
Jiang, Hai-Bo,Xing, Ting-Wen,Du, Meng,et al. Illumination optimization in optical projective lithography[C]. 见:Proceedings of SPIE: International Symposium on Photoelectronic Detection and Imaging 2013: Micro/Nano Optical Imaging Technologies and Applications. 2013.
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