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Gap-optimized Moiré phase imaging alignment for proximity lithography
Zhu, Jiangping1; Hu, Song2; You, Zhisheng1; Su, Xianyu3
Source PublicationOptical Engineering
Volume54Issue:1Pages:17105
2015
Language英语
ISSN0091-3286
DOI10.1117/1.OE.54.1.017105
Indexed BySCI ; Ei
WOS IDWOS:000349442900047
Subtype期刊论文
AbstractThe proposed four-quadrant Moiré alignment scheme to detect the misalignment between mask and wafer for proximity lithography can achieve the alignment accuracy with nanometer level. When implementing the scheme, however, the distribution of Moiré fringes associated with the mask-wafer gap indeed goes against the alignment, making the gap optimization highly urgent. The optimization model is established, and numerical simulation as well as experimental verification is also provided. Furthermore, an alignment accuracy of ∼3 nm with the illumination wavelength of 632.8 nm is experimentally attained. Simultaneously, the design mechanism of alignment marks for improving the availability of the alignment scheme is discussed. © Society of Photo-Optical Instrumentation Engineers.; The proposed four-quadrant Moiré alignment scheme to detect the misalignment between mask and wafer for proximity lithography can achieve the alignment accuracy with nanometer level. When implementing the scheme, however, the distribution of Moiré fringes associated with the mask-wafer gap indeed goes against the alignment, making the gap optimization highly urgent. The optimization model is established, and numerical simulation as well as experimental verification is also provided. Furthermore, an alignment accuracy of ∼3 nm with the illumination wavelength of 632.8 nm is experimentally attained. Simultaneously, the design mechanism of alignment marks for improving the availability of the alignment scheme is discussed. © Society of Photo-Optical Instrumentation Engineers.
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Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/7328
Collection微电子装备总体研究室(四室)
Corresponding AuthorYou, Zhisheng
Affiliation1. Sichuan University, School of Computer Science and Technology, Chengdu, China
2. Chinese Academy of Sciences, State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chengdu, China
3. Sichuan University, School of Electronics and Information, Chengdu, China
Recommended Citation
GB/T 7714
Zhu, Jiangping,Hu, Song,You, Zhisheng,et al. Gap-optimized Moiré phase imaging alignment for proximity lithography[J]. Optical Engineering,2015,54(1):17105.
APA Zhu, Jiangping,Hu, Song,You, Zhisheng,&Su, Xianyu.(2015).Gap-optimized Moiré phase imaging alignment for proximity lithography.Optical Engineering,54(1),17105.
MLA Zhu, Jiangping,et al."Gap-optimized Moiré phase imaging alignment for proximity lithography".Optical Engineering 54.1(2015):17105.
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