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题名:
Spectrum-Integral Talbot Effect for UV Photolithography with Extended DOF
作者: Liu, Junbo1,2; Zhou, Shaolin3; Hu, Song4; Gao, Hongtao4; He, Yu4; Cheng, Yiguang1,2
刊名: IEEE Photonics Technology Letters
出版日期: 2015
卷号: 27, 期号:20, 页码:2201-2204
学科分类: Diffraction - Light polarization - Lithography - Microanalysis - Microfabrication - Periodic structures
DOI: 10.1109/LPT.2015.2456184
文章类型: 期刊论文
中文摘要: A route of spectrum-integral Talbot lithography (SITL) with extended depth-of-focus (DOF) for microfabrication of periodic structures was explored under broadband incoherent illumination in this letter. The transmitted diffraction fields by different spectral components integrate together to generate the successive periodicity since certain distance along the direction of propagation. The mechanism of DOF extension was derived and numerically elucidated using the spectrum of a practical ultraviolet source. Experiments of proximity lithography in term of the numeric results were performed to record the intensity distributions within the DOF area. Finally, the results reveal the validity of SITL and its potentials in high-fidelity lithography of periodic micropatterns with almost unlimited DOF and thus enhanced resolution. © 2015 IEEE.
英文摘要: A route of spectrum-integral Talbot lithography (SITL) with extended depth-of-focus (DOF) for microfabrication of periodic structures was explored under broadband incoherent illumination in this letter. The transmitted diffraction fields by different spectral components integrate together to generate the successive periodicity since certain distance along the direction of propagation. The mechanism of DOF extension was derived and numerically elucidated using the spectrum of a practical ultraviolet source. Experiments of proximity lithography in term of the numeric results were performed to record the intensity distributions within the DOF area. Finally, the results reveal the validity of SITL and its potentials in high-fidelity lithography of periodic micropatterns with almost unlimited DOF and thus enhanced resolution. © 2015 IEEE.
收录类别: SCI ; Ei
项目资助者: National Natural Science Foundation of China [61204114, 6274108, 61376110, 61405060] ; Science and Technology Planning Project of Guangdong Province [2014A010104005] ; Fundamental Research Funds for the Central Universities of South China University of Technology [2015 ZZ030] ; State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, China [skelpme2015-5-28]
语种: 英语
WOS记录号: WOS:000361685200024
ISSN号: 1041-1135
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/7326
Appears in Collections:微电子装备总体研究室(四室)_期刊论文

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作者单位: 1. University of Chinese, Academy of Sciences, Beijing, China
2. Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China
3. School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China
4. State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China

Recommended Citation:
Liu, Junbo,Zhou, Shaolin,Hu, Song,et al. Spectrum-Integral Talbot Effect for UV Photolithography with Extended DOF[J]. IEEE Photonics Technology Letters,2015,27(20):2201-2204.
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