| Spectrum-Integral Talbot Effect for UV Photolithography with Extended DOF | |
Liu, Junbo1,2; Zhou, Shaolin3; Hu, Song4; Gao, Hongtao4; He, Yu4; Cheng, Yiguang1,2
| |
| Source Publication | IEEE Photonics Technology Letters
 |
| Volume | 27Issue:20Pages:2201-2204 |
| 2015 | |
| Language | 英语 |
| ISSN | 1041-1135 |
| DOI | 10.1109/LPT.2015.2456184 |
| Indexed By | SCI ; Ei |
| WOS ID | WOS:000361685200024 |
| Subtype | 期刊论文 |
| Abstract | A route of spectrum-integral Talbot lithography (SITL) with extended depth-of-focus (DOF) for microfabrication of periodic structures was explored under broadband incoherent illumination in this letter. The transmitted diffraction fields by different spectral components integrate together to generate the successive periodicity since certain distance along the direction of propagation. The mechanism of DOF extension was derived and numerically elucidated using the spectrum of a practical ultraviolet source. Experiments of proximity lithography in term of the numeric results were performed to record the intensity distributions within the DOF area. Finally, the results reveal the validity of SITL and its potentials in high-fidelity lithography of periodic micropatterns with almost unlimited DOF and thus enhanced resolution. © 2015 IEEE.; A route of spectrum-integral Talbot lithography (SITL) with extended depth-of-focus (DOF) for microfabrication of periodic structures was explored under broadband incoherent illumination in this letter. The transmitted diffraction fields by different spectral components integrate together to generate the successive periodicity since certain distance along the direction of propagation. The mechanism of DOF extension was derived and numerically elucidated using the spectrum of a practical ultraviolet source. Experiments of proximity lithography in term of the numeric results were performed to record the intensity distributions within the DOF area. Finally, the results reveal the validity of SITL and its potentials in high-fidelity lithography of periodic micropatterns with almost unlimited DOF and thus enhanced resolution. © 2015 IEEE. |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ioe.ac.cn/handle/181551/7326 |
| Collection | 微电子装备总体研究室（四室） |
| Affiliation | 1. University of Chinese, Academy of Sciences, Beijing, China 2. Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China 3. School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China 4. State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China |
| Recommended Citation GB/T 7714 | Liu, Junbo,Zhou, Shaolin,Hu, Song,et al. Spectrum-Integral Talbot Effect for UV Photolithography with Extended DOF[J]. IEEE Photonics Technology Letters,2015,27(20):2201-2204. |
| APA | Liu, Junbo,Zhou, Shaolin,Hu, Song,Gao, Hongtao,He, Yu,&Cheng, Yiguang.(2015).Spectrum-Integral Talbot Effect for UV Photolithography with Extended DOF.IEEE Photonics Technology Letters,27(20),2201-2204. |
| MLA | Liu, Junbo,et al."Spectrum-Integral Talbot Effect for UV Photolithography with Extended DOF".IEEE Photonics Technology Letters 27.20(2015):2201-2204. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2015-2087.pdf（1408KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment