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Moiré-based absolute interferometry with large measurement range in wafer-mask alignment
Di, Chengliang1,2; Yan, Wei2; Hu, Song2; Yin, Didi1,3; Ma, Chifei1,2
Source PublicationIEEE Photonics Technology Letters
Volume27Issue:4Pages:435-438
2015
Language英语
ISSN1041-1135
DOI10.1109/LPT.2014.2377037
Indexed BySCI ; Ei
WOS IDWOS:000349111700012
Subtype期刊论文
AbstractThe moiré-based interferometry is demonstrated to significantly improve the measurement range in wafer-mask alignment by adopting two specifically designed four-quadrant grating marks. These relationships between the measurement range, the moiré periods and the accuracy of the moiré-based detection algorithm are deduced. By demodulating the transverse shifts of the moiré fringes with two kinds of periods, the final misalignment can be accurately determined. An experimental setup of the wafer-mask alignment is constructed to explore the feasibility and effectiveness of proposed approach. Results indicate that with the established configurations, the measurement range can be readily extended to 120 μm, which is dozens of times larger than conventional methods, and meanwhile the detection accuracy retains to be at nanometers level. © 2014 IEEE.; The moiré-based interferometry is demonstrated to significantly improve the measurement range in wafer-mask alignment by adopting two specifically designed four-quadrant grating marks. These relationships between the measurement range, the moiré periods and the accuracy of the moiré-based detection algorithm are deduced. By demodulating the transverse shifts of the moiré fringes with two kinds of periods, the final misalignment can be accurately determined. An experimental setup of the wafer-mask alignment is constructed to explore the feasibility and effectiveness of proposed approach. Results indicate that with the established configurations, the measurement range can be readily extended to 120 μm, which is dozens of times larger than conventional methods, and meanwhile the detection accuracy retains to be at nanometers level. © 2014 IEEE.
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/7324
Collection微电子装备总体研究室(四室)
Corresponding AuthorYan, Wei
Affiliation1. University of Chinese Academy of Sciences, Beijing, China
2. State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China
3. Key Laboratory of Beam Control, Chinese Academy of Sciences, Chengdu, China
Recommended Citation
GB/T 7714
Di, Chengliang,Yan, Wei,Hu, Song,et al. Moiré-based absolute interferometry with large measurement range in wafer-mask alignment[J]. IEEE Photonics Technology Letters,2015,27(4):435-438.
APA Di, Chengliang,Yan, Wei,Hu, Song,Yin, Didi,&Ma, Chifei.(2015).Moiré-based absolute interferometry with large measurement range in wafer-mask alignment.IEEE Photonics Technology Letters,27(4),435-438.
MLA Di, Chengliang,et al."Moiré-based absolute interferometry with large measurement range in wafer-mask alignment".IEEE Photonics Technology Letters 27.4(2015):435-438.
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