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题名:
Moiré interferometry with high alignment resolution in proximity lithographic process
作者: Zhou, Shaolin1,4; Hu, Song2; Fu, Yongqi3; Xu, Xiangmin1; Yang, Jun4
刊名: Applied Optics
出版日期: 2014
卷号: 53, 期号:5, 页码:951-959
学科分类: Alignment - Diffraction gratings
DOI: 10.1364/AO.53.000951
通讯作者: Fu, Yongqi
文章类型: 期刊论文
中文摘要: Moiré interferometry is widely used as the precise metrology in many science and engineering fields. The schemes of moirés-based interferometry adopting diffraction gratings are presented in this paper for applications in a proximity lithographic system such as wafer-mask alignment, the in-plane twist angle adjustment, and tilts remediation. For the sake of adjustment of lateral offset as well as the tilt and in-plane twist angle, schemes of the (m;-m) and (m;0) moiré interferometry are explored, respectively. Fundamental derivation of the moiré interferometry and schemes for related applications are provided. Three pairs of gratings with close periods are fabricated to form the composite grating. And experiments are performed to confirm the moiré interferometry for related applications in our proximity lithographic system. Experimental results indicate that unaligned lateral offset is detectable with resolution at the nanometer level, and the tilt and in-plane twist angle between wafer and mask could be manually decreased down to the scope of 10-3and 10-4rad, respectively. © 2014 Optical Society of America.
英文摘要: Moiré interferometry is widely used as the precise metrology in many science and engineering fields. The schemes of moirés-based interferometry adopting diffraction gratings are presented in this paper for applications in a proximity lithographic system such as wafer-mask alignment, the in-plane twist angle adjustment, and tilts remediation. For the sake of adjustment of lateral offset as well as the tilt and in-plane twist angle, schemes of the (m;-m) and (m;0) moiré interferometry are explored, respectively. Fundamental derivation of the moiré interferometry and schemes for related applications are provided. Three pairs of gratings with close periods are fabricated to form the composite grating. And experiments are performed to confirm the moiré interferometry for related applications in our proximity lithographic system. Experimental results indicate that unaligned lateral offset is detectable with resolution at the nanometer level, and the tilt and in-plane twist angle between wafer and mask could be manually decreased down to the scope of 10-3and 10-4rad, respectively. © 2014 Optical Society of America.
收录类别: SCI ; Ei
项目资助者: Fundamental Research Funds for the Central Universities of South China University of Technology [2012ZM 0027]
语种: 英语
WOS记录号: WOS:000331368300022
ISSN号: 1559-128X
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/7305
Appears in Collections:微电子装备总体研究室(四室)_期刊论文

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作者单位: 1. School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China
2. State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China
3. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China
4. Department of Mechanical and Materials Engineering, Western University (The University of Western Ontario), London
5.ON, Canada

Recommended Citation:
Zhou, Shaolin,Hu, Song,Fu, Yongqi,et al. Moiré interferometry with high alignment resolution in proximity lithographic process[J]. Applied Optics,2014,53(5):951-959.
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