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Nanolithography method with controllable critical dimension based on evanescent waves coupling
Zhang, Yukun1,2,3; Du, Jinglei1; Yin, Shaoyun2; Gao, Hongtao3; Xia, Liangping2; Shi, Lifang3; Du, Chunlei2; Zhang, Zhiyou1; Zhang, Z. (zhangzhiyou@scu.edu.cn)
Source PublicationOptik
Volume125Issue:13Pages:3201-3203
2014
Language英语
ISSN00304026
DOI10.1016/j.ijleo.2014.01.024
Indexed BySCI ; Ei
WOS IDWOS:000337656400047
Subtype期刊论文
AbstractWe propose a method of generating nanostructures based on evanescent waves coupling. The nanopatterns with ultra-high resolution can be formed by the interference of the evanescent waves between the pattern edges of the mold. Through properly adjusting the width of the mold groove, critical dimension of the nanopatterns can be effectively controlled. The critical dimension of the electric field versus the width of the mold groove is systematically calculated by finite-difference time-domain method. The calculation results demonstrate that through adjusting the geometric parameters of the mold, critical dimension of the electric field can be controlled within the range of 30 nm and 100 nm, and the contrast ratio is above 60%. This method provides an easy way for fabricating nanostructures with various dimensions corresponding to the mold patterns and it maybe useful in the applications such as integrate circuits, ultra-high sensitive sensors, and optical storage. © 2014 Elsevier GmbH.; We propose a method of generating nanostructures based on evanescent waves coupling. The nanopatterns with ultra-high resolution can be formed by the interference of the evanescent waves between the pattern edges of the mold. Through properly adjusting the width of the mold groove, critical dimension of the nanopatterns can be effectively controlled. The critical dimension of the electric field versus the width of the mold groove is systematically calculated by finite-difference time-domain method. The calculation results demonstrate that through adjusting the geometric parameters of the mold, critical dimension of the electric field can be controlled within the range of 30 nm and 100 nm, and the contrast ratio is above 60%. This method provides an easy way for fabricating nanostructures with various dimensions corresponding to the mold patterns and it maybe useful in the applications such as integrate circuits, ultra-high sensitive sensors, and optical storage. © 2014 Elsevier GmbH.
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/7304
Collection微电子装备总体研究室(四室)
Corresponding AuthorZhang, Z. (zhangzhiyou@scu.edu.cn)
Affiliation1. Physics Department, Sichuan University, Chengdu, Sichuan Province 610064, China
2. Chongqing Institute of Green and Intelligent of Chinese Academy of Sciences, Chongqing 401122, China
3. Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, Sichuan Province 610209, China
Recommended Citation
GB/T 7714
Zhang, Yukun,Du, Jinglei,Yin, Shaoyun,et al. Nanolithography method with controllable critical dimension based on evanescent waves coupling[J]. Optik,2014,125(13):3201-3203.
APA Zhang, Yukun.,Du, Jinglei.,Yin, Shaoyun.,Gao, Hongtao.,Xia, Liangping.,...&Zhang, Z. .(2014).Nanolithography method with controllable critical dimension based on evanescent waves coupling.Optik,125(13),3201-3203.
MLA Zhang, Yukun,et al."Nanolithography method with controllable critical dimension based on evanescent waves coupling".Optik 125.13(2014):3201-3203.
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