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Four-quadrant gratings moiré fringe alignment measurement in proximity lithography
Zhu, Jiangping1,2,3; Hu, Song1; Yu, JunshenG.2; Zhou, Shaolin5; Tang, Yan1; Zhong, Min4; Zhao, Lixin1; Chen, Minyong1; Li, Lanlan1,3; He, Yu1,3; Jiang, Wei1; Zhu, J.
Source PublicationOptics Express
Volume21Issue:3Pages:3463-3473
2013
Language英语
DOI10.1364/OE.21.003463
Indexed BySCI ; Ei
WOS IDWOS:000315991400094
Subtype期刊论文
AbstractThis paper aims to deal with a four-quadrant gratings alignment method benefiting from phase demodulation for proximity lithography, which combines the advantages of interferometry with image processing. Both the mask alignment mark and the wafer alignment mark consist of four sets of gratings, which bring the convenience and simplification of realization for coarse alignment and fine alignment. Four sets of moire´ fringes created by superposing the mask alignment mark and the wafer alignment mark are highly sensitive to the misalignment between them. And the misalignment can be easily determined through demodulating the phase of moire´ fringe without any external reference. Especially, the period and phase distribution of moire´ fringes are unaffected by the gap between the mask and the wafer, not excepting the wavelength of alignment illumination. Disturbance from the illumination can also be negligible, which enhances the technological adaptability. The experimental results bear out the feasibility and rationality of our designed approach. © 2013 Optical Society of America.; This paper aims to deal with a four-quadrant gratings alignment method benefiting from phase demodulation for proximity lithography, which combines the advantages of interferometry with image processing. Both the mask alignment mark and the wafer alignment mark consist of four sets of gratings, which bring the convenience and simplification of realization for coarse alignment and fine alignment. Four sets of moire´ fringes created by superposing the mask alignment mark and the wafer alignment mark are highly sensitive to the misalignment between them. And the misalignment can be easily determined through demodulating the phase of moire´ fringe without any external reference. Especially, the period and phase distribution of moire´ fringes are unaffected by the gap between the mask and the wafer, not excepting the wavelength of alignment illumination. Disturbance from the illumination can also be negligible, which enhances the technological adaptability. The experimental results bear out the feasibility and rationality of our designed approach. © 2013 Optical Society of America.
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/7286
Collection微电子装备总体研究室(四室)
Corresponding AuthorZhu, J.
Affiliation1. Institution of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China
2. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China
3. Graduate University, Chinese Academy of Sciences, Beijing 100039, China
4. School of Electronic and Information, Sichuan University, Chengdu 610065, China
5. School of Electronic and Information, South China University of Technology, Guangzhou 510640, China
Recommended Citation
GB/T 7714
Zhu, Jiangping,Hu, Song,Yu, JunshenG.,et al. Four-quadrant gratings moiré fringe alignment measurement in proximity lithography[J]. Optics Express,2013,21(3):3463-3473.
APA Zhu, Jiangping.,Hu, Song.,Yu, JunshenG..,Zhou, Shaolin.,Tang, Yan.,...&Zhu, J..(2013).Four-quadrant gratings moiré fringe alignment measurement in proximity lithography.Optics Express,21(3),3463-3473.
MLA Zhu, Jiangping,et al."Four-quadrant gratings moiré fringe alignment measurement in proximity lithography".Optics Express 21.3(2013):3463-3473.
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