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离子束辅助工艺中APS源偏转电压对HfO_2薄膜性能的影响
申林; 田俊林; 刘志国; 熊胜明
Source Publication强激光与粒子束
Volume21Issue:1Pages:118-122
2009
Language中文
Indexed ByEi
Subtype期刊论文
Abstract基于Leybold APS1104镀膜系统,采用离子束辅助反应沉积技术,以金属Hf粒为初始镀膜材料,APS源偏转电压为50~140 V范围内,在[100]单晶硅片和紫外石英(JGS1)基板上制备了HfO2单层膜.分别利用Lambda 900分光光度计、X射线光电
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6932
Collection轻量化中心
Corresponding Author申林
Affiliation中国科学院光电技术研究所
Recommended Citation
GB/T 7714
申林,田俊林,刘志国,等. 离子束辅助工艺中APS源偏转电压对HfO_2薄膜性能的影响[J]. 强激光与粒子束,2009,21(1):118-122.
APA 申林,田俊林,刘志国,&熊胜明.(2009).离子束辅助工艺中APS源偏转电压对HfO_2薄膜性能的影响.强激光与粒子束,21(1),118-122.
MLA 申林,et al."离子束辅助工艺中APS源偏转电压对HfO_2薄膜性能的影响".强激光与粒子束 21.1(2009):118-122.
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