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Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens
Gao, Ping; Yao, Na; Wang, Changtao; Zhao, Zeyu; Luo, Yunfei; Wang, Yanqin; Gao, Guohan; Liu, Kaipeng; Zhao, Chengwei; Luo, Xiangang; Gao, P (reprint author), Chinese Acad Sci, State Key Lab Opt Technol Nanofabricat & Microeng, Chengdu 610209, Peoples R China.
Source PublicationAPPLIED PHYSICS LETTERS
Volume106Issue:9Pages:93110
2015
Language英语
ISSN0003-6951
DOI10.1063/1.4914000
Indexed BySCI
WOS IDWOS:000351069900055
Subtype期刊论文
AbstractPoor aspect profiles of plasmonic lithography patterns are suffering from evanescent waves' scattering loss in metal films and decaying exposure in photoresist. To address this issue, we experimentally report plasmonic cavity lens to enhance aspect profile and resolution of plasmonic lithography. The profile depth of half-pitch (hp) 32 nm resist patterns is experimentally improved up to 23 nm, exceeding in the reported sub-10 nm photoresist depth. The resist patterns are then transferred to bottom resist patterns with 80 nm depth using hard-mask technology and etching steps. The resolution of plasmonic cavity lens up to hp 22 nm is experimentally demonstrated. The enhancement of the aspect profile and resolution is mainly attributed to evanescent waves amplifying from the bottom silver layer and scattering loss reduction with smooth silver films in plasmonic cavity lens. Further, theoretical near-field exposure model is utilized to evaluate aspect profile with plasmonic cavity lens and well illustrates the experimental results. (C) 2015 AIP Publishing LLC.; Poor aspect profiles of plasmonic lithography patterns are suffering from evanescent waves' scattering loss in metal films and decaying exposure in photoresist. To address this issue, we experimentally report plasmonic cavity lens to enhance aspect profile and resolution of plasmonic lithography. The profile depth of half-pitch (hp) 32 nm resist patterns is experimentally improved up to 23 nm, exceeding in the reported sub-10 nm photoresist depth. The resist patterns are then transferred to bottom resist patterns with 80 nm depth using hard-mask technology and etching steps. The resolution of plasmonic cavity lens up to hp 22 nm is experimentally demonstrated. The enhancement of the aspect profile and resolution is mainly attributed to evanescent waves amplifying from the bottom silver layer and scattering loss reduction with smooth silver films in plasmonic cavity lens. Further, theoretical near-field exposure model is utilized to evaluate aspect profile with plasmonic cavity lens and well illustrates the experimental results. (C) 2015 AIP Publishing LLC.
Citation statistics
Cited Times:98[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6894
Collection微细加工光学技术国家重点实验室(开放室)
Corresponding AuthorGao, P (reprint author), Chinese Acad Sci, State Key Lab Opt Technol Nanofabricat & Microeng, Chengdu 610209, Peoples R China.
Affiliation1.[Gao, Ping
2.Yao, Na
3.Wang, Changtao
4.Zhao, Zeyu
5.Luo, Yunfei
6.Wang, Yanqin
7.Gao, Guohan
8.Liu, Kaipeng
9.Zhao, Chengwei
10.Luo, Xiangang] Chinese Acad Sci, State Key Lab Opt Technol Nanofabricat & Microeng, Chengdu 610209, Peoples R China
Recommended Citation
GB/T 7714
Gao, Ping,Yao, Na,Wang, Changtao,et al. Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens[J]. APPLIED PHYSICS LETTERS,2015,106(9):93110.
APA Gao, Ping.,Yao, Na.,Wang, Changtao.,Zhao, Zeyu.,Luo, Yunfei.,...&Gao, P .(2015).Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens.APPLIED PHYSICS LETTERS,106(9),93110.
MLA Gao, Ping,et al."Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens".APPLIED PHYSICS LETTERS 106.9(2015):93110.
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