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题名:
248 nm imaging photolithography assisted by surface plasmon polariton interference
作者: Tian, Man-man1; Mi, Jia-jia1; Shi, Jian-ping1; Wei, Nan-nan1; Zhan, Ling-li1; Huang, Wan-xia1; Zuo, Ze-wen1; Wang, Chang-tao2; Luo, Xian-gang2
刊名: Optoelectronics Letters
出版日期: 2014
卷号: 10, 期号:1, 页码:24-26
学科分类: Computer simulation - Electromagnetic wave polarization - Finite difference time domain method - Photolithography - Plasmons - Time domain analysis
DOI: 10.1007/s11801-014-3172-1
通讯作者: Shi, J.-P. (shi_jian_ping@hotmail.com)
文章类型: 期刊论文
中文摘要: A new photolithography technique for 248 nm based on the interference of surface plasmon waves is proposed and demonstrated by using computer simulations. The basic structure consists of surface plasmon polariton (SPP) interference mask and multi-layer film superlens. Using the amplification effect of superlens on evanescent wave, the near field SPP interference pattern is imaged to the far field, and then is exposed on photo resist (PR). The simulation results based on finite difference time domain (FDTD) method show that the full width at half maximum (FWHM) of the interference pattern is about 19 nm when the p-polarization light from 248 nm source is vertically incident to the structure. Meanwhile, the focal depth is 150 nm for negative PR and 60 nm for positive PR, which is much greater than that in usual SPP photolithography. © 2014 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
英文摘要: A new photolithography technique for 248 nm based on the interference of surface plasmon waves is proposed and demonstrated by using computer simulations. The basic structure consists of surface plasmon polariton (SPP) interference mask and multi-layer film superlens. Using the amplification effect of superlens on evanescent wave, the near field SPP interference pattern is imaged to the far field, and then is exposed on photo resist (PR). The simulation results based on finite difference time domain (FDTD) method show that the full width at half maximum (FWHM) of the interference pattern is about 19 nm when the p-polarization light from 248 nm source is vertically incident to the structure. Meanwhile, the focal depth is 150 nm for negative PR and 60 nm for positive PR, which is much greater than that in usual SPP photolithography. © 2014 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
收录类别: Ei
语种: 英语
ISSN号: 16731905
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6869
Appears in Collections:微细加工光学技术国家重点实验室(开放室)_期刊论文

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作者单位: 1. College of Physics and Electronic Information, Anhui Normal University, Wuhu, 241000, China
2. State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, 610209, China

Recommended Citation:
Tian, Man-man,Mi, Jia-jia,Shi, Jian-ping,et al. 248 nm imaging photolithography assisted by surface plasmon polariton interference[J]. Optoelectronics Letters,2014,10(1):24-26.
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