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Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography
Zhang, Wei; Yao, Na; Wang, Changtao; Zhao, Zeyu; Wang, Yanqin; Gao, Ping; Luo, Xiangang; Luo, XG (reprint author), Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Nanofabricat & Microeng, POB 350, Chengdu 610209, Peoples R China.
Source PublicationPLASMONICS
Volume9Issue:6Pages:1333-1339
2014
Language英语
ISSN1557-1955
DOI10.1007/s11468-014-9746-8
Indexed BySCI
WOS IDWOS:000345146800010
Subtype期刊论文
AbstractOff axis illumination (OAI) technique combined with planar hyperlens is applied to achieve the non-contacted deep subwavelength demagnifying lithography. The designed OAI is confirmed to shift the spatial spectra of mask, leading to enhancement of the featured wavevectors components. On the other hand, the reflection effect of Ag cladding is necessary to obtain high contrast and high fidelity of nanopattern lithography. It is numerically demonstrated that the half-pitch resolution 32 nm with OAI (NA = 1.37) is obtained under 80 nm air working distance, which is about six times than the case of the conventional configuration under normal illumination (NA = 0). Further simulations show that the minimum half-pitch resolution of the planar hyperlens with OAI could reach 18 nm (similar to lambda/20).; Off axis illumination (OAI) technique combined with planar hyperlens is applied to achieve the non-contacted deep subwavelength demagnifying lithography. The designed OAI is confirmed to shift the spatial spectra of mask, leading to enhancement of the featured wavevectors components. On the other hand, the reflection effect of Ag cladding is necessary to obtain high contrast and high fidelity of nanopattern lithography. It is numerically demonstrated that the half-pitch resolution 32 nm with OAI (NA = 1.37) is obtained under 80 nm air working distance, which is about six times than the case of the conventional configuration under normal illumination (NA = 0). Further simulations show that the minimum half-pitch resolution of the planar hyperlens with OAI could reach 18 nm (similar to lambda/20).
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6846
Collection微细加工光学技术国家重点实验室(开放室)
Corresponding AuthorLuo, XG (reprint author), Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Nanofabricat & Microeng, POB 350, Chengdu 610209, Peoples R China.
Affiliation1.[Zhang, Wei
2.Yao, Na
3.Wang, Changtao
4.Zhao, Zeyu
5.Wang, Yanqin
6.Gao, Ping
7.Luo, Xiangang] Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Nanofabricat & Microeng, Chengdu 610209, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Wei,Yao, Na,Wang, Changtao,et al. Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography[J]. PLASMONICS,2014,9(6):1333-1339.
APA Zhang, Wei.,Yao, Na.,Wang, Changtao.,Zhao, Zeyu.,Wang, Yanqin.,...&Luo, XG .(2014).Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography.PLASMONICS,9(6),1333-1339.
MLA Zhang, Wei,et al."Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography".PLASMONICS 9.6(2014):1333-1339.
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