Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography | |
Zhang, Wei; Yao, Na; Wang, Changtao; Zhao, Zeyu; Wang, Yanqin; Gao, Ping; Luo, Xiangang; Luo, XG (reprint author), Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Nanofabricat & Microeng, POB 350, Chengdu 610209, Peoples R China. | |
Source Publication | PLASMONICS
![]() |
Volume | 9Issue:6Pages:1333-1339 |
2014 | |
Language | 英语 |
ISSN | 1557-1955 |
DOI | 10.1007/s11468-014-9746-8 |
Indexed By | SCI |
WOS ID | WOS:000345146800010 |
Subtype | 期刊论文 |
Abstract | Off axis illumination (OAI) technique combined with planar hyperlens is applied to achieve the non-contacted deep subwavelength demagnifying lithography. The designed OAI is confirmed to shift the spatial spectra of mask, leading to enhancement of the featured wavevectors components. On the other hand, the reflection effect of Ag cladding is necessary to obtain high contrast and high fidelity of nanopattern lithography. It is numerically demonstrated that the half-pitch resolution 32 nm with OAI (NA = 1.37) is obtained under 80 nm air working distance, which is about six times than the case of the conventional configuration under normal illumination (NA = 0). Further simulations show that the minimum half-pitch resolution of the planar hyperlens with OAI could reach 18 nm (similar to lambda/20).; Off axis illumination (OAI) technique combined with planar hyperlens is applied to achieve the non-contacted deep subwavelength demagnifying lithography. The designed OAI is confirmed to shift the spatial spectra of mask, leading to enhancement of the featured wavevectors components. On the other hand, the reflection effect of Ag cladding is necessary to obtain high contrast and high fidelity of nanopattern lithography. It is numerically demonstrated that the half-pitch resolution 32 nm with OAI (NA = 1.37) is obtained under 80 nm air working distance, which is about six times than the case of the conventional configuration under normal illumination (NA = 0). Further simulations show that the minimum half-pitch resolution of the planar hyperlens with OAI could reach 18 nm (similar to lambda/20). |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.ioe.ac.cn/handle/181551/6846 |
Collection | 微细加工光学技术国家重点实验室(开放室) |
Corresponding Author | Luo, XG (reprint author), Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Nanofabricat & Microeng, POB 350, Chengdu 610209, Peoples R China. |
Affiliation | 1.[Zhang, Wei 2.Yao, Na 3.Wang, Changtao 4.Zhao, Zeyu 5.Wang, Yanqin 6.Gao, Ping 7.Luo, Xiangang] Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Nanofabricat & Microeng, Chengdu 610209, Peoples R China |
Recommended Citation GB/T 7714 | Zhang, Wei,Yao, Na,Wang, Changtao,et al. Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography[J]. PLASMONICS,2014,9(6):1333-1339. |
APA | Zhang, Wei.,Yao, Na.,Wang, Changtao.,Zhao, Zeyu.,Wang, Yanqin.,...&Luo, XG .(2014).Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography.PLASMONICS,9(6),1333-1339. |
MLA | Zhang, Wei,et al."Off Axis Illumination Planar Hyperlens for Non-contacted Deep Subwavelength Demagnifying Lithography".PLASMONICS 9.6(2014):1333-1339. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
2014-2088.pdf(1623KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment