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Superlens imaging lithography for high aspect ratio sub-wavelength pattern employing trilayer resist process
Fang, Liang; Pan, Li; Wang, Changtao; Luo, Xiangang; Luo, X. (lxg@ioe.ac.cn)
Source PublicationMicroelectronic Engineering
Volume110Pages:35-39
2013
Language英语
ISSN01679317
DOI10.1016/j.mee.2013.04.037
Indexed BySCI ; Ei
WOS IDWOS:000326003600007
Subtype期刊论文
AbstractRecently, superlens imaging lithography below the diffraction limit has been experimentally verified. However, the short exposure depth owing to the near-field attribute of this method restricts its practical application. A tri-layer resist process, which increases the pattern depth through two-step dry etching, can overcome this drawback. In this paper, we investigated the scheme of superlens imaging lithography employing a tri-layer resist process and analysed the effect of the air gap between the object and the photosensitive layer on the exposure depth by finite-difference time-domain analyses. Through optimising the three layer resist thicknesses and dry-etching parameters of the tri-layer resist process, we patterned a high aspect ratio structure with half pitch of 110 nm and depth of 400 nm in our experiment. © 2013 Elsevier B.V. All rights reserved.; Recently, superlens imaging lithography below the diffraction limit has been experimentally verified. However, the short exposure depth owing to the near-field attribute of this method restricts its practical application. A tri-layer resist process, which increases the pattern depth through two-step dry etching, can overcome this drawback. In this paper, we investigated the scheme of superlens imaging lithography employing a tri-layer resist process and analysed the effect of the air gap between the object and the photosensitive layer on the exposure depth by finite-difference time-domain analyses. Through optimising the three layer resist thicknesses and dry-etching parameters of the tri-layer resist process, we patterned a high aspect ratio structure with half pitch of 110 nm and depth of 400 nm in our experiment. © 2013 Elsevier B.V. All rights reserved.
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Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6817
Collection微细加工光学技术国家重点实验室(开放室)
Corresponding AuthorLuo, X. (lxg@ioe.ac.cn)
Affiliation State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Chengdu 610209, China
Recommended Citation
GB/T 7714
Fang, Liang,Pan, Li,Wang, Changtao,et al. Superlens imaging lithography for high aspect ratio sub-wavelength pattern employing trilayer resist process[J]. Microelectronic Engineering,2013,110:35-39.
APA Fang, Liang,Pan, Li,Wang, Changtao,Luo, Xiangang,&Luo, X. .(2013).Superlens imaging lithography for high aspect ratio sub-wavelength pattern employing trilayer resist process.Microelectronic Engineering,110,35-39.
MLA Fang, Liang,et al."Superlens imaging lithography for high aspect ratio sub-wavelength pattern employing trilayer resist process".Microelectronic Engineering 110(2013):35-39.
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