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题名:
Superlens imaging lithography for high aspect ratio sub-wavelength pattern employing trilayer resist process
作者: Fang, Liang; Pan, Li; Wang, Changtao; Luo, Xiangang
刊名: Microelectronic Engineering
出版日期: 2013
卷号: 110, 页码:35-39
学科分类: Aspect ratio - Diffraction - Finite difference time domain method
DOI: 10.1016/j.mee.2013.04.037
通讯作者: Luo, X. (lxg@ioe.ac.cn)
文章类型: 期刊论文
中文摘要: Recently, superlens imaging lithography below the diffraction limit has been experimentally verified. However, the short exposure depth owing to the near-field attribute of this method restricts its practical application. A tri-layer resist process, which increases the pattern depth through two-step dry etching, can overcome this drawback. In this paper, we investigated the scheme of superlens imaging lithography employing a tri-layer resist process and analysed the effect of the air gap between the object and the photosensitive layer on the exposure depth by finite-difference time-domain analyses. Through optimising the three layer resist thicknesses and dry-etching parameters of the tri-layer resist process, we patterned a high aspect ratio structure with half pitch of 110 nm and depth of 400 nm in our experiment. © 2013 Elsevier B.V. All rights reserved.
英文摘要: Recently, superlens imaging lithography below the diffraction limit has been experimentally verified. However, the short exposure depth owing to the near-field attribute of this method restricts its practical application. A tri-layer resist process, which increases the pattern depth through two-step dry etching, can overcome this drawback. In this paper, we investigated the scheme of superlens imaging lithography employing a tri-layer resist process and analysed the effect of the air gap between the object and the photosensitive layer on the exposure depth by finite-difference time-domain analyses. Through optimising the three layer resist thicknesses and dry-etching parameters of the tri-layer resist process, we patterned a high aspect ratio structure with half pitch of 110 nm and depth of 400 nm in our experiment. © 2013 Elsevier B.V. All rights reserved.
收录类别: SCI ; Ei
项目资助者: 973 Program of China [2013CBA01700] ; Chinese Nature Science Grant [61138002]
语种: 英语
WOS记录号: WOS:000326003600007
ISSN号: 01679317
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6817
Appears in Collections:微细加工光学技术国家重点实验室(开放室)_期刊论文

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作者单位: State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Chengdu 610209, China

Recommended Citation:
Fang, Liang,Pan, Li,Wang, Changtao,et al. Superlens imaging lithography for high aspect ratio sub-wavelength pattern employing trilayer resist process[J]. Microelectronic Engineering,2013,110:35-39.
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