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题名:
Engineering heavily doped silicon for broadband absorber in the terahertz regime
作者: Pu, Mingbo; Wang, Min; Hu, Chenggang; Huang, Cheng; Zhao, Zeyu; Wang, Yanqin; Luo, Xiangang
刊名: Optics Express
出版日期: 2012
卷号: 20, 期号:23, 页码:25513-25519
学科分类: Frequency bands - Optical properties - Silicon
通讯作者: Pu, M.
文章类型: 期刊论文
中文摘要: Highly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped silicon (0.7676 Ω cm) grating. It is numerically demonstrated by utilizing both the zero- and first order diffraction in the doped silicon wafer, relative absorption bandwidth larger than 100% can be achieved. Furthermore, the design can be easily extended to higher frequencies as the optical property of doped silicon is tunable through changing the doping concentration. © 2012 Optical Society of America.
英文摘要: Highly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped silicon (0.7676 Ω cm) grating. It is numerically demonstrated by utilizing both the zero- and first order diffraction in the doped silicon wafer, relative absorption bandwidth larger than 100% can be achieved. Furthermore, the design can be easily extended to higher frequencies as the optical property of doped silicon is tunable through changing the doping concentration. © 2012 Optical Society of America.
收录类别: SCI ; Ei
项目资助者: 973 Program of China [2011CB301800] ; National Natural Science Funds for Distinguished Young Scholar [60825405]
语种: 英语
WOS记录号: WOS:000311340300060
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6802
Appears in Collections:微细加工光学技术国家重点实验室(开放室)_期刊论文

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作者单位: State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China

Recommended Citation:
Pu, Mingbo,Wang, Min,Hu, Chenggang,et al. Engineering heavily doped silicon for broadband absorber in the terahertz regime[J]. Optics Express,2012,20(23):25513-25519.
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