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Engineering heavily doped silicon for broadband absorber in the terahertz regime
Pu, Mingbo; Wang, Min; Hu, Chenggang; Huang, Cheng; Zhao, Zeyu; Wang, Yanqin; Luo, Xiangang; Pu, M.
Source PublicationOptics Express
Volume20Issue:23Pages:25513-25519
2012
Language英语
Indexed BySCI ; Ei
WOS IDWOS:000311340300060
Subtype期刊论文
AbstractHighly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped silicon (0.7676 Ω cm) grating. It is numerically demonstrated by utilizing both the zero- and first order diffraction in the doped silicon wafer, relative absorption bandwidth larger than 100% can be achieved. Furthermore, the design can be easily extended to higher frequencies as the optical property of doped silicon is tunable through changing the doping concentration. © 2012 Optical Society of America.; Highly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped silicon (0.7676 Ω cm) grating. It is numerically demonstrated by utilizing both the zero- and first order diffraction in the doped silicon wafer, relative absorption bandwidth larger than 100% can be achieved. Furthermore, the design can be easily extended to higher frequencies as the optical property of doped silicon is tunable through changing the doping concentration. © 2012 Optical Society of America.
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6802
Collection微细加工光学技术国家重点实验室(开放室)
Corresponding AuthorPu, M.
Affiliation State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China
Recommended Citation
GB/T 7714
Pu, Mingbo,Wang, Min,Hu, Chenggang,et al. Engineering heavily doped silicon for broadband absorber in the terahertz regime[J]. Optics Express,2012,20(23):25513-25519.
APA Pu, Mingbo.,Wang, Min.,Hu, Chenggang.,Huang, Cheng.,Zhao, Zeyu.,...&Pu, M..(2012).Engineering heavily doped silicon for broadband absorber in the terahertz regime.Optics Express,20(23),25513-25519.
MLA Pu, Mingbo,et al."Engineering heavily doped silicon for broadband absorber in the terahertz regime".Optics Express 20.23(2012):25513-25519.
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