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激光干涉光刻法制作100nm掩模
陈欣; 赵青; 方亮; 王长涛; 罗先刚
Source Publication强激光与粒子束
Volume23Issue:3Pages:806-810
2011
Language中文
Subtype期刊论文
Abstract介绍了一种利用激光干涉光刻技术得到特征图形,并通过离子束刻蚀将图形转移到铬层上,从而获得掩模的方法。针对掩模透光率以及对干涉图形对比度可能产生影响的两个参数分别进行了数值仿真,从而证明此方法的可行性和参数的优化选择。自搭干涉光刻实验系统,用257 nm的激光光源实现光刻,得到特征尺寸为100 nm的图形,再经过离子束刻蚀,最终得到周期200 nm、线宽100 nm的掩模。
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6774
Collection微细加工光学技术国家重点实验室(开放室)
Corresponding Author陈欣
Affiliation中国科学院光电技术研究所
Recommended Citation
GB/T 7714
陈欣,赵青,方亮,等. 激光干涉光刻法制作100nm掩模[J]. 强激光与粒子束,2011,23(3):806-810.
APA 陈欣,赵青,方亮,王长涛,&罗先刚.(2011).激光干涉光刻法制作100nm掩模.强激光与粒子束,23(3),806-810.
MLA 陈欣,et al."激光干涉光刻法制作100nm掩模".强激光与粒子束 23.3(2011):806-810.
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