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题名:
Improving resolution of superlens lithography by phase-shifting mask
作者: Yao Na; Lai Zian; Fang Liang; Wang Changtao; Feng Qin; Zhao Zheyu; Luo Xiangang
刊名: OPTICS EXPRESS
出版日期: 2011
卷号: 19, 期号:17, 页码:15982-15989
通讯作者: Yao N (Yao Na)
文章类型: 期刊论文
中文摘要: We propose to apply phase-shifting mask (PSM) to superlens lithography to improve its resolution. The PSM comprises of chromium slits alternatively filled by Ag and PMMA. The pi-phase shift is induced whereas thEir transmittance of electric intensity is almost equal for two nEighboring slits. The destructive interference between two slits has greatly improved the spatial resolution and image fidelity. For representative configurations of superlens lithography, FDTD numerical simulations demonstrate that two slits with center-to-center distance d = 35 nm (similar to lambda/10) can be resolved in PSM design, compared to 60 nm (similar to lambda/6) without the PSM. (C)2011 Optical Society of America
英文摘要: We propose to apply phase-shifting mask (PSM) to superlens lithography to improve its resolution. The PSM comprises of chromium slits alternatively filled by Ag and PMMA. The pi-phase shift is induced whereas thEir transmittance of electric intensity is almost equal for two nEighboring slits. The destructive interference between two slits has greatly improved the spatial resolution and image fidelity. For representative configurations of superlens lithography, FDTD numerical simulations demonstrate that two slits with center-to-center distance d = 35 nm (similar to lambda/10) can be resolved in PSM design, compared to 60 nm (similar to lambda/6) without the PSM. (C)2011 Optical Society of America
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6761
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作者单位: 中国科学院光电技术研究所

Recommended Citation:
Yao Na,Lai Zian,Fang Liang,et al. Improving resolution of superlens lithography by phase-shifting mask[J]. OPTICS EXPRESS,2011,19(17):15982-15989.
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