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题名:
Breaking the feature sizes down to sub-22 nm by plasmonic interference lithography using dielectric-metal multilayer
作者: Yang XF; Zeng BB; Wang CT
刊名: OPTICS EXPRESS 
出版日期: 2009
卷号: 17, 期号:24, 页码:21560-21565
通讯作者: Yang XF
文章类型: 期刊论文
中文摘要: We have developed the plasmonic interference lithography technique to achieve the feature sizes theoretically down to sub-22 nm even to 16.5 nm by using dielectric-metal multilayer (DMM) with diffraction-limited masks at the wavelength of 193 nm with p-polarization. An 8 pairs of GaN (10 nm) / Al (12 nm) multilayer is designed as a filter allowing only a part of high wavevector k (evanescent waves) to pass through for interference lithography. The analysis of the influence by the number of DMM layers is presented. 4 pairs of the proposed multilayer can be competent for pattern the minimal feature size down to 21.5 nm at the visibility about 0.4 to satisfy the minimum visibility required with positive resist. Finite-difference time-domain analysis method is used to demonstrate the validity of the theory.
英文摘要: We have developed the plasmonic interference lithography technique to achieve the feature sizes theoretically down to sub-22 nm even to 16.5 nm by using dielectric-metal multilayer (DMM) with diffraction-limited masks at the wavelength of 193 nm with p-polarization. An 8 pairs of GaN (10 nm) / Al (12 nm) multilayer is designed as a filter allowing only a part of high wavevector k (evanescent waves) to pass through for interference lithography. The analysis of the influence by the number of DMM layers is presented. 4 pairs of the proposed multilayer can be competent for pattern the minimal feature size down to 21.5 nm at the visibility about 0.4 to satisfy the minimum visibility required with positive resist. Finite-difference time-domain analysis method is used to demonstrate the validity of the theory.
收录类别: SCI ; Ei
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6694
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作者单位: 中国科学院光电技术研究所

Recommended Citation:
Yang XF,Zeng BB,Wang CT. Breaking the feature sizes down to sub-22 nm by plasmonic interference lithography using dielectric-metal multilayer[J]. OPTICS EXPRESS ,2009,17(24):21560-21565.
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