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题名:
Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation
作者: Wang, Qian1,2; Li, Bincheng1; Ren, Shengdong1,2; Wang, Qiang1
刊名: International Journal of Thermophysics
出版日期: 2015
卷号: 36, 期号:5-6, 页码:1173-1180
学科分类: Arsenic - Excimer lasers - Ion implantation - Ions - Irradiation - Laser beam effects - Photoelectricity - Radiometry - Silicon
DOI: 10.1007/s10765-014-1602-8
通讯作者: Li, Bincheng
文章类型: 期刊论文
中文摘要: The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193 nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of 1×1015 cm-2 and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated. © 2014, Springer Science+Business Media New York.
英文摘要: The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193 nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of 1×1015 cm-2 and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated. © 2014, Springer Science+Business Media New York.
收录类别: SCI ; Ei
项目资助者: National Science Foundation of China [61076090, 60676056]
语种: 英语
WOS记录号: WOS:000356611100050
ISSN号: 0195-928X
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6643
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

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作者单位: 1. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu
2.Sichuan, China
3. University of the Chinese Academy of Sciences, Beijing, China

Recommended Citation:
Wang, Qian,Li, Bincheng,Ren, Shengdong,et al. Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation[J]. International Journal of Thermophysics,2015,36(5-6):1173-1180.
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