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Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging
Wang, Qian1,2; Li, Bincheng1,3
Source PublicationJournal of Applied Physics
Volume118Issue:12Pages:125705
2015
Language英语
ISSN0021-8979
DOI10.1063/1.4931773
Indexed BySCI ; Ei
WOS IDWOS:000362565800075
Subtype期刊论文
AbstractSpatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii. © 2015 AIP Publishing LLC.; Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii. © 2015 AIP Publishing LLC.
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6639
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorLi, Bincheng
Affiliation1. Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu, China
2. University of the Chinese Academy of Sciences, Beijing, China
3. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, China
Recommended Citation
GB/T 7714
Wang, Qian,Li, Bincheng. Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging[J]. Journal of Applied Physics,2015,118(12):125705.
APA Wang, Qian,&Li, Bincheng.(2015).Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging.Journal of Applied Physics,118(12),125705.
MLA Wang, Qian,et al."Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging".Journal of Applied Physics 118.12(2015):125705.
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