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题名:
Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging
作者: Wang, Qian1,2; Li, Bincheng1,3
刊名: Journal of Applied Physics
出版日期: 2015
卷号: 118, 期号:12, 页码:125705
学科分类: Carrier lifetime - Imaging techniques - Photoelectricity - Polymerase chain reaction - Radiometry - Semiconducting silicon - Silicon
DOI: 10.1063/1.4931773
通讯作者: Li, Bincheng
文章类型: 期刊论文
中文摘要: Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii. © 2015 AIP Publishing LLC.
英文摘要: Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii. © 2015 AIP Publishing LLC.
收录类别: SCI ; Ei
项目资助者: National Science Foundation of China [61076090]
语种: 英语
WOS记录号: WOS:000362565800075
ISSN号: 0021-8979
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6639
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

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作者单位: 1. Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu, China
2. University of the Chinese Academy of Sciences, Beijing, China
3. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, China

Recommended Citation:
Wang, Qian,Li, Bincheng. Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging[J]. Journal of Applied Physics,2015,118(12):125705.
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