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Carrier diffusivity measurement in silicon wafers using free carrier absorption
Zhang, Xiren1,2; Li, Bincheng2; Zhang, X. (xiren3208@163.com)
Source PublicationInternational Journal of Thermophysics
Volume34Issue:8-9Pages:1721-1726
2013
Language英语
ISSN0195928X
DOI10.1007/s10765-013-1459-2
Indexed BySCI ; Ei
WOS IDWOS:000325815500045
Subtype期刊论文
AbstractIn this article, it has been shown that the modulated free carrier absorption method (MFCA) can be used to determine unambiguously and without contact the carrier diffusivity of semiconductor wafers. The linear dependence of the phase on the distance of pump and probe beams are investigated with computer simulation, and then it has been found that at high frequency the slope of the MFCA phase versus distance depends solely on the carrier diffusivity. Hence, the carrier diffusivity can be extracted from the slope of the phase versus distance. Experiments were carried out on an n-type Si wafer with 7Ω·cm to 10Ω·cm resistivity and (525±20) μm thickness. Comparing the experimental fitted results to those by fitting the MFCA amplitude and phase on the pump-probe-beam separation measured at several modulation frequencies to the rigorous three-dimensional carrier diffusion model, the fitted results by both methods agreed well. This shows that the simplified model can be used to determine the carrier diffusivity with high precision. © Springer Science+Business Media New York 2013.; In this article, it has been shown that the modulated free carrier absorption method (MFCA) can be used to determine unambiguously and without contact the carrier diffusivity of semiconductor wafers. The linear dependence of the phase on the distance of pump and probe beams are investigated with computer simulation, and then it has been found that at high frequency the slope of the MFCA phase versus distance depends solely on the carrier diffusivity. Hence, the carrier diffusivity can be extracted from the slope of the phase versus distance. Experiments were carried out on an n-type Si wafer with 7Ω·cm to 10Ω·cm resistivity and (525±20) μm thickness. Comparing the experimental fitted results to those by fitting the MFCA amplitude and phase on the pump-probe-beam separation measured at several modulation frequencies to the rigorous three-dimensional carrier diffusion model, the fitted results by both methods agreed well. This shows that the simplified model can be used to determine the carrier diffusivity with high precision. © Springer Science+Business Media New York 2013.
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6627
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorZhang, X. (xiren3208@163.com)
Affiliation1. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China
2. Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu 610209, Sichuan, China
Recommended Citation
GB/T 7714
Zhang, Xiren,Li, Bincheng,Zhang, X. . Carrier diffusivity measurement in silicon wafers using free carrier absorption[J]. International Journal of Thermophysics,2013,34(8-9):1721-1726.
APA Zhang, Xiren,Li, Bincheng,&Zhang, X. .(2013).Carrier diffusivity measurement in silicon wafers using free carrier absorption.International Journal of Thermophysics,34(8-9),1721-1726.
MLA Zhang, Xiren,et al."Carrier diffusivity measurement in silicon wafers using free carrier absorption".International Journal of Thermophysics 34.8-9(2013):1721-1726.
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