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Characterization of silicon wafers with combined photocarrier radiometry and free carrier absorption
Li, Bincheng1; Huang, Qiuping1,2; Ren, Shengdong1,2; Li, B. (bcli@ioe.ac.cn)
Source PublicationInternational Journal of Thermophysics
Volume34Issue:8-9Pages:1735-1745
2013
Language英语
ISSN0195928X
DOI10.1007/s10765-013-1506-z
Indexed BySCI ; Ei
WOS IDWOS:000325815500047
Subtype期刊论文
AbstractA combined photocarrier radiometry (PCR) and free carrier absorption (FCA) technique was employed to evaluate the electronic transport properties (carrier lifetime τ, diffusion coefficient D, and the front surface recombination velocity S1) of silicon wafers and to monitor the ion implantation and thermal annealing processes in the semiconductor manufacturing. For non-implanted silicon wafers, the experimental results showed that the accuracy of the simultaneous determination of the transport properties was greatly improved by fitting simultaneously the measured PCR and FCA signals to the theoretical models via a multi-parameter fitting procedure. For As+ ion implanted and thermal annealed silicon wafers, the results showed that both PCR and FCA amplitudes increased monotonically with the increasing implantation dose (5 × 1011 cm-2 to 1 × 1016 cm-2), the decreasing implantation energy (20 keV to 140 keV), and the increasing annealing temperature (500 °C to 1000 °C), respectively. To explain the dependences of the PCR signals on the implantation and annealing parameters, a multi-wavelength PCR technique was proposed to extract the electronic transport properties of the implanted and annealed wafers. The results showed that ion implantation and thermal annealing caused significant decreases of the minority carrier lifetime and diffusion coefficient of the implantation layer, as well as the recombination velocity at the front surface. All three parameters decreased with the increasing implantation dose. © Springer Science+Business Media New York 2013.; A combined photocarrier radiometry (PCR) and free carrier absorption (FCA) technique was employed to evaluate the electronic transport properties (carrier lifetime τ, diffusion coefficient D, and the front surface recombination velocity S1) of silicon wafers and to monitor the ion implantation and thermal annealing processes in the semiconductor manufacturing. For non-implanted silicon wafers, the experimental results showed that the accuracy of the simultaneous determination of the transport properties was greatly improved by fitting simultaneously the measured PCR and FCA signals to the theoretical models via a multi-parameter fitting procedure. For As+ ion implanted and thermal annealed silicon wafers, the results showed that both PCR and FCA amplitudes increased monotonically with the increasing implantation dose (5 × 1011 cm-2 to 1 × 1016 cm-2), the decreasing implantation energy (20 keV to 140 keV), and the increasing annealing temperature (500 °C to 1000 °C), respectively. To explain the dependences of the PCR signals on the implantation and annealing parameters, a multi-wavelength PCR technique was proposed to extract the electronic transport properties of the implanted and annealed wafers. The results showed that ion implantation and thermal annealing caused significant decreases of the minority carrier lifetime and diffusion coefficient of the implantation layer, as well as the recombination velocity at the front surface. All three parameters decreased with the increasing implantation dose. © Springer Science+Business Media New York 2013.
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6622
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorLi, B. (bcli@ioe.ac.cn)
Affiliation1. Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu 610209, Sichuan, China
2. Graduate University of the Chinese Academy of Sciences, Beijing 100039, China
Recommended Citation
GB/T 7714
Li, Bincheng,Huang, Qiuping,Ren, Shengdong,et al. Characterization of silicon wafers with combined photocarrier radiometry and free carrier absorption[J]. International Journal of Thermophysics,2013,34(8-9):1735-1745.
APA Li, Bincheng,Huang, Qiuping,Ren, Shengdong,&Li, B. .(2013).Characterization of silicon wafers with combined photocarrier radiometry and free carrier absorption.International Journal of Thermophysics,34(8-9),1735-1745.
MLA Li, Bincheng,et al."Characterization of silicon wafers with combined photocarrier radiometry and free carrier absorption".International Journal of Thermophysics 34.8-9(2013):1735-1745.
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