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题名:
Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers
作者: Ren, Shengdong1,2; Li, Bincheng1; Huang, Qiuping1,2
刊名: Journal of Applied Physics
出版日期: 2013
卷号: 114, 期号:24, 页码:243702
学科分类: Diffusion - Silicon - Silicon solar cells - Three dimensional
DOI: 10.1063/1.4852417
文章类型: 期刊论文
中文摘要: A three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n-and p-type Si wafers with resistivity ranging 1-38 Ω·cm were then fitted to the three-dimensional transient model to extract simultaneously and unambiguously the transport parameters of Si wafers, namely, the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity via multi-parameter fitting. A basic agreement between the extracted parameter values and the literature values was obtained. © 2013 AIP Publishing LLC.
英文摘要: A three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n-and p-type Si wafers with resistivity ranging 1-38 Ω·cm were then fitted to the three-dimensional transient model to extract simultaneously and unambiguously the transport parameters of Si wafers, namely, the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity via multi-parameter fitting. A basic agreement between the extracted parameter values and the literature values was obtained. © 2013 AIP Publishing LLC.
收录类别: SCI ; Ei
项目资助者: National Science Foundation of China [60676058, 61076090]
语种: 英语
WOS记录号: WOS:000329173200029
ISSN号: 00218979
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6619
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

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作者单位: 1. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu, Sichuan 610209, China
2. University of the Chinese Academy of Sciences, Beijing 100039, China

Recommended Citation:
Ren, Shengdong,Li, Bincheng,Huang, Qiuping. Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers[J]. Journal of Applied Physics,2013,114(24):243702.
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