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Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers
Ren, Shengdong1,2; Li, Bincheng1; Huang, Qiuping1,2
Source PublicationJournal of Applied Physics
Volume114Issue:24Pages:243702
2013
Language英语
ISSN00218979
DOI10.1063/1.4852417
Indexed BySCI ; Ei
WOS IDWOS:000329173200029
Subtype期刊论文
AbstractA three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n-and p-type Si wafers with resistivity ranging 1-38 Ω·cm were then fitted to the three-dimensional transient model to extract simultaneously and unambiguously the transport parameters of Si wafers, namely, the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity via multi-parameter fitting. A basic agreement between the extracted parameter values and the literature values was obtained. © 2013 AIP Publishing LLC.; A three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n-and p-type Si wafers with resistivity ranging 1-38 Ω·cm were then fitted to the three-dimensional transient model to extract simultaneously and unambiguously the transport parameters of Si wafers, namely, the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity via multi-parameter fitting. A basic agreement between the extracted parameter values and the literature values was obtained. © 2013 AIP Publishing LLC.
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Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6619
Collection薄膜光学技术研究室(十一室)
Affiliation1. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu, Sichuan 610209, China
2. University of the Chinese Academy of Sciences, Beijing 100039, China
Recommended Citation
GB/T 7714
Ren, Shengdong,Li, Bincheng,Huang, Qiuping. Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers[J]. Journal of Applied Physics,2013,114(24):243702.
APA Ren, Shengdong,Li, Bincheng,&Huang, Qiuping.(2013).Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers.Journal of Applied Physics,114(24),243702.
MLA Ren, Shengdong,et al."Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers".Journal of Applied Physics 114.24(2013):243702.
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