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题名:
Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers
作者: Ren, Sheng-Dong1,2; Li, Bin-Cheng1; Gao, Li-Feng1; Wang, Qian1,2
刊名: Chinese Physics B
出版日期: 2013
卷号: 22, 期号:5, 页码:057202
学科分类: Ion implantation - Photoelectricity - Radiometers - Radiometry - Silicon - Time domain analysis
DOI: 10.1088/1674-1056/22/5/057202
通讯作者: Li, B.-C. (bcli@ioe.ac.cn)
文章类型: 期刊论文
中文摘要: A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1 × 1011 cm-2 to 1 × 10 16 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals. © 2013 Chinese Physical Society and IOP Publishing Ltd.
英文摘要: A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1 × 1011 cm-2 to 1 × 10 16 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals. © 2013 Chinese Physical Society and IOP Publishing Ltd.
收录类别: SCI ; Ei
项目资助者: National Natural Science Foundation of China [60676058, 61076090]
语种: 英语
WOS记录号: WOS:000319498300072
ISSN号: 16741056
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6617
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

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作者单位: 1. Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China
2. University of the Chinese Academy of Sciences, Beijing 100049, China

Recommended Citation:
Ren, Sheng-Dong,Li, Bin-Cheng,Gao, Li-Feng,et al. Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers[J]. Chinese Physics B,2013,22(5):057202.
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