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Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers
Ren, Sheng-Dong1,2; Li, Bin-Cheng1; Gao, Li-Feng1; Wang, Qian1,2; Li, B.-C. (bcli@ioe.ac.cn)
Source PublicationChinese Physics B
Volume22Issue:5Pages:057202
2013
Language英语
ISSN16741056
DOI10.1088/1674-1056/22/5/057202
Indexed BySCI ; Ei
WOS IDWOS:000319498300072
Subtype期刊论文
AbstractA combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1 × 1011 cm-2 to 1 × 10 16 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals. © 2013 Chinese Physical Society and IOP Publishing Ltd.; A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1 × 1011 cm-2 to 1 × 10 16 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals. © 2013 Chinese Physical Society and IOP Publishing Ltd.
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Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6617
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorLi, B.-C. (bcli@ioe.ac.cn)
Affiliation1. Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China
2. University of the Chinese Academy of Sciences, Beijing 100049, China
Recommended Citation
GB/T 7714
Ren, Sheng-Dong,Li, Bin-Cheng,Gao, Li-Feng,et al. Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers[J]. Chinese Physics B,2013,22(5):057202.
APA Ren, Sheng-Dong,Li, Bin-Cheng,Gao, Li-Feng,Wang, Qian,&Li, B.-C. .(2013).Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers.Chinese Physics B,22(5),057202.
MLA Ren, Sheng-Dong,et al."Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers".Chinese Physics B 22.5(2013):057202.
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