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Refractive index inhomogeneity of LaF3 film at deep ultraviolet wavelength
Lin, Dawei1; Guo, Chun1,2; Li, Bincheng1; Li, B. (bcli@ioe.ac.cn)
Source PublicationChinese Optics Letters
Volume11Issue:SUPPL.1Pages:S10602
2013
Language英语
ISSN16717694
DOI10.3788/COL201311.S10602
Indexed BySCI ; Ei
WOS IDWOS:000209349900041
Subtype期刊论文
AbstractIt is well known that the optical property of an optical thin film can be influenced by even small inhomogeneity of refractive index (RI). In order to investigate the RI inhomogeneity of LaF3 single layer in deep ultraviolet (DUV) range, single-layer LaF3 samples deposited on fused silica and CaF2 substrates are prepared by resistive heating evaporation at different deposition temperatures. The reflectance and transmittance spectra of LaF3 film samples are measured with a spectrophotometer, and used to calculate the RI inhomogeneity. The experimental results show that no RI inhomogeneity of LaF3 film is observed when deposited on CaF2 substrate, while negative RI inhomogeneity is presented when deposited on fused silica substrate. The level of inhomogeneity is affected by the substrate temperature, which decreases with the increasing substrate temperature from 250 to 400°C. © 2013 Chinese Optics Letters.; It is well known that the optical property of an optical thin film can be influenced by even small inhomogeneity of refractive index (RI). In order to investigate the RI inhomogeneity of LaF3 single layer in deep ultraviolet (DUV) range, single-layer LaF3 samples deposited on fused silica and CaF2 substrates are prepared by resistive heating evaporation at different deposition temperatures. The reflectance and transmittance spectra of LaF3 film samples are measured with a spectrophotometer, and used to calculate the RI inhomogeneity. The experimental results show that no RI inhomogeneity of LaF3 film is observed when deposited on CaF2 substrate, while negative RI inhomogeneity is presented when deposited on fused silica substrate. The level of inhomogeneity is affected by the substrate temperature, which decreases with the increasing substrate temperature from 250 to 400°C. © 2013 Chinese Optics Letters.
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6616
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorLi, B. (bcli@ioe.ac.cn)
Affiliation1. Institude of Optics and Electrics, Chinese Academy of Sciences, Chengdu 610209, China
2. University of the Chinese Academy of Sciences, Beijing 100039, China
Recommended Citation
GB/T 7714
Lin, Dawei,Guo, Chun,Li, Bincheng,et al. Refractive index inhomogeneity of LaF3 film at deep ultraviolet wavelength[J]. Chinese Optics Letters,2013,11(SUPPL.1):S10602.
APA Lin, Dawei,Guo, Chun,Li, Bincheng,&Li, B. .(2013).Refractive index inhomogeneity of LaF3 film at deep ultraviolet wavelength.Chinese Optics Letters,11(SUPPL.1),S10602.
MLA Lin, Dawei,et al."Refractive index inhomogeneity of LaF3 film at deep ultraviolet wavelength".Chinese Optics Letters 11.SUPPL.1(2013):S10602.
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