中国科学院光电技术研究所机构知识库
Advanced  
IOE OpenIR  > 薄膜光学技术研究室(十一室)  > 期刊论文
题名:
Photocarrier radiometry of ion-implanted and thermally annealed silicon wafers with multiple-wavelength excitations
作者: Huang, Qiuping1,2; Li, Bincheng1
刊名: Journal of Applied Physics
出版日期: 2012
卷号: 111, 期号:9, 页码:093729
学科分类: Annealing - Diffusion - Ion implantation - Ions - Photoelectricity - Photoluminescence - Radiometers - Radiometry - Silicon solar cells - Transport properties - Wavelength
DOI: 10.1063/1.4716032
通讯作者: Li, B. (bcli@ioe.ac.cn)
文章类型: 期刊论文
中文摘要: The electronic transport properties of ion-implanted and thermally annealed silicon wafers and their effects on the room temperature photoluminescence have been investigated by a two-layer photocarrier radiometry (PCR) model with multiple-wavelength excitations. Simulations are carried out to show the dependences of the PCR amplitudes on the structural and transport properties (thickness, minority carrier lifetime, diffusion coefficient, and front surface recombination velocity) of the implanted layer with excitation in a wide spectral range, respectively. Experiments on As+ implanted and thermally annealed silicon wafers with ion fluences ranging from 5 × 1014 to 1 × 1016 cm-2 were performed, with 830 nm, 660 nm, and 405 nm excitations. Both the simulated and experimental results show that the transport properties of the implanted layer can be obtained by fitting the PCR amplitudes under the multi-wavelength excitations at a fixed modulation frequency to the theoretical model via a multi-parameter fitting procedure. The ion implantation and thermal annealing processes result in significant decreases of the minority carrier lifetime and diffusion coefficient of the implanted layer, and the recombination velocity at the front surface, and all three parameters decrease with the increasing ion fluence. The photoluminescence of the ion-implanted and thermally annealed wafers is significantly stronger than that of the non-implanted and non-annealed wafer, mainly due to the considerable decline of the front surface recombination velocity. In addition, the decreasing carrier diffusion coefficient of the implanted layer may be another reason for the enhancement of the photoluminescence under long-wavelength excitations. © 2012 American Institute of Physics.
英文摘要: The electronic transport properties of ion-implanted and thermally annealed silicon wafers and their effects on the room temperature photoluminescence have been investigated by a two-layer photocarrier radiometry (PCR) model with multiple-wavelength excitations. Simulations are carried out to show the dependences of the PCR amplitudes on the structural and transport properties (thickness, minority carrier lifetime, diffusion coefficient, and front surface recombination velocity) of the implanted layer with excitation in a wide spectral range, respectively. Experiments on As+ implanted and thermally annealed silicon wafers with ion fluences ranging from 5 × 1014 to 1 × 1016 cm-2 were performed, with 830 nm, 660 nm, and 405 nm excitations. Both the simulated and experimental results show that the transport properties of the implanted layer can be obtained by fitting the PCR amplitudes under the multi-wavelength excitations at a fixed modulation frequency to the theoretical model via a multi-parameter fitting procedure. The ion implantation and thermal annealing processes result in significant decreases of the minority carrier lifetime and diffusion coefficient of the implanted layer, and the recombination velocity at the front surface, and all three parameters decrease with the increasing ion fluence. The photoluminescence of the ion-implanted and thermally annealed wafers is significantly stronger than that of the non-implanted and non-annealed wafer, mainly due to the considerable decline of the front surface recombination velocity. In addition, the decreasing carrier diffusion coefficient of the implanted layer may be another reason for the enhancement of the photoluminescence under long-wavelength excitations. © 2012 American Institute of Physics.
收录类别: Ei
项目资助者: National Science Foundation of China [61076090, 60676058]
语种: 英语
WOS记录号: WOS:000304109900078
ISSN号: 00218979
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6605
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
2012-2020.pdf(853KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: 1. Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu, Sichuan 610209, China
2. Graduate School of the Chinese Academy of Sciences, Beijing 100039, China

Recommended Citation:
Huang, Qiuping,Li, Bincheng. Photocarrier radiometry of ion-implanted and thermally annealed silicon wafers with multiple-wavelength excitations[J]. Journal of Applied Physics,2012,111(9):093729.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Huang, Qiuping]'s Articles
[Li, Bincheng]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Huang, Qiuping]‘s Articles
[Li, Bincheng]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: 2012-2020.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Copyright © 2007-2016  中国科学院光电技术研究所 - Feedback
Powered by CSpace