IOE OpenIR  > 薄膜光学技术研究室(十一室)
Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers
Bincheng Li; and Xianming Liu
Source PublicationCrystallinf Silicon
Pages105-120
2011
Language英语
Subtype期刊论文
AbstractThe optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resulting in the unavailability of normal visible spectroscopic ellipsometry (SE) measurements. In this study, the SE measurements are performed in infrared range (2-20 μm) to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength shou]d be used to distinguish lower impurity concentration.; The optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resulting in the unavailability of normal visible spectroscopic ellipsometry (SE) measurements. In this study, the SE measurements are performed in infrared range (2-20 μm) to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength shou]d be used to distinguish lower impurity concentration.
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6591
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorBincheng Li
Affiliation中国科学院光电技术研究所
Recommended Citation
GB/T 7714
Bincheng Li,and Xianming Liu. Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers[J]. Crystallinf Silicon,2011:105-120.
APA Bincheng Li,&and Xianming Liu.(2011).Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers.Crystallinf Silicon,105-120.
MLA Bincheng Li,et al."Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers".Crystallinf Silicon (2011):105-120.
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