| Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers | |
| Bincheng Li; and Xianming Liu | |
| Source Publication | Crystallinf Silicon
 |
| Pages | 105-120 |
| 2011 | |
| Language | 英语 |
| Subtype | 期刊论文 |
| Abstract | The optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resulting in the unavailability of normal visible spectroscopic ellipsometry (SE) measurements. In this study, the SE measurements are performed in infrared range (2-20 μm) to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength shou]d be used to distinguish lower impurity concentration.; The optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resulting in the unavailability of normal visible spectroscopic ellipsometry (SE) measurements. In this study, the SE measurements are performed in infrared range (2-20 μm) to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength shou]d be used to distinguish lower impurity concentration. |
| Document Type | 期刊论文 |
| Identifier | http://ir.ioe.ac.cn/handle/181551/6591 |
| Collection | 薄膜光学技术研究室（十一室） |
| Corresponding Author | Bincheng Li |
| Affiliation | 中国科学院光电技术研究所 |
| Recommended Citation GB/T 7714 | Bincheng Li,and Xianming Liu. Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers[J]. Crystallinf Silicon,2011:105-120. |
| APA | Bincheng Li,&and Xianming Liu.(2011).Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers.Crystallinf Silicon,105-120. |
| MLA | Bincheng Li,et al."Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers".Crystallinf Silicon (2011):105-120. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2011-11-007.pdf（723KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
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