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Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers
Liu Xian-Ming; Li Bin-Cheng; Huang Qiu-Ping
Source PublicationChinese Physics B
Volume19Issue:9
2010
Language英语
Subtype期刊论文
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6582
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorLiu Xian-Ming
Affiliation中国科学院光电技术研究所
Recommended Citation
GB/T 7714
Liu Xian-Ming,Li Bin-Cheng,Huang Qiu-Ping. Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers[J]. Chinese Physics B,2010,19(9).
APA Liu Xian-Ming,Li Bin-Cheng,&Huang Qiu-Ping.(2010).Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers.Chinese Physics B,19(9).
MLA Liu Xian-Ming,et al."Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers".Chinese Physics B 19.9(2010).
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