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题名:
Semi-infinite photocarrier radiometric model for the characterization of semiconductor wafer
作者: Xianming Liu; Bincheng Li; Qiuping Huang
刊名: Journal of Physics: Conference Series
出版日期: 2010
卷号: 214
通讯作者: Xianming Liu
文章类型: 期刊论文
中文摘要: The analytical expression is derived to describe the photocarrier radiometric (PCR) signal for a semi-infinite semiconductor wafer excited by a square-wave modulated laser. For comparative study, the PCR signals are calculated by the semi-infinite model and the finite thickness model with several thicknesses. The fitted errors of the electronic transport properties by semi-infinite model are analyzed. From these results it is evident that for thick samples or at high modulation frequency, the semiconductor can be considered as semi-infinite.
英文摘要: The analytical expression is derived to describe the photocarrier radiometric (PCR) signal for a semi-infinite semiconductor wafer excited by a square-wave modulated laser. For comparative study, the PCR signals are calculated by the semi-infinite model and the finite thickness model with several thicknesses. The fitted errors of the electronic transport properties by semi-infinite model are analyzed. From these results it is evident that for thick samples or at high modulation frequency, the semiconductor can be considered as semi-infinite.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6581
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

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作者单位: 中国科学院光电技术研究所

Recommended Citation:
Xianming Liu,Bincheng Li,Qiuping Huang. Semi-infinite photocarrier radiometric model for the characterization of semiconductor wafer[J]. Journal of Physics: Conference Series,2010,214.
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