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题名:
Nondestructive implantation dose determination of annealed semiconductor by infrared ellipsometry
作者: Liu Xianming; Li Bincheng; Gao Weidong; Gao Lifeng
刊名: Journal of Physics: Conference Series
出版日期: 2010
卷号: 214
通讯作者: Liu Xianming
文章类型: 期刊论文
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6579
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

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作者单位: 中国科学院光电技术研究所

Recommended Citation:
Liu Xianming,Li Bincheng,Gao Weidong,et al. Nondestructive implantation dose determination of annealed semiconductor by infrared ellipsometry[J]. Journal of Physics: Conference Series,2010,214.
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