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Nondestructive implantation dose determination of annealed semiconductor by infrared ellipsometry
Liu Xianming; Li Bincheng; Gao Weidong; Gao Lifeng
Source PublicationJournal of Physics: Conference Series
Volume214
2010
Language英语
Subtype期刊论文
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6579
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorLiu Xianming
Affiliation中国科学院光电技术研究所
Recommended Citation
GB/T 7714
Liu Xianming,Li Bincheng,Gao Weidong,et al. Nondestructive implantation dose determination of annealed semiconductor by infrared ellipsometry[J]. Journal of Physics: Conference Series,2010,214.
APA Liu Xianming,Li Bincheng,Gao Weidong,&Gao Lifeng.(2010).Nondestructive implantation dose determination of annealed semiconductor by infrared ellipsometry.Journal of Physics: Conference Series,214.
MLA Liu Xianming,et al."Nondestructive implantation dose determination of annealed semiconductor by infrared ellipsometry".Journal of Physics: Conference Series 214(2010).
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