中国科学院光电技术研究所机构知识库
Advanced  
IOE OpenIR  > 薄膜光学技术研究室(十一室)  > 期刊论文
题名:
Ion implantation dose dependence of photocarrier radiometry for thermally annealed silicon wafers
作者: Xianming Liu; Bincheng Li; Qiuping Huang
刊名: Journal of Physics: Conference Series
出版日期: 2010
卷号: 214
通讯作者: Xianming Liu
文章类型: 期刊论文
中文摘要: Photocarrier radiometry (PCR) signal is a monotonic function of the implantation dose if the wafers are not annealed, because the signal is determined by the crystalline damage in the semiconductor induced by implantation. When the wafers are annealed at high temperature with most of the damages recovered, however, the PCR signal is no longer monotonic to the implantation dose. In this work, we obtained the PCR signals of the implanted and non-implanted regions from the same pieces of annealed sample. By subtracting the signals from the non-implanted regions, the influence of doped impurities on PCR signals is investigated. The different response at low implantation dose caused by B /sup +/ and P /sup +/ ions is analyzed.
英文摘要: Photocarrier radiometry (PCR) signal is a monotonic function of the implantation dose if the wafers are not annealed, because the signal is determined by the crystalline damage in the semiconductor induced by implantation. When the wafers are annealed at high temperature with most of the damages recovered, however, the PCR signal is no longer monotonic to the implantation dose. In this work, we obtained the PCR signals of the implanted and non-implanted regions from the same pieces of annealed sample. By subtracting the signals from the non-implanted regions, the influence of doped impurities on PCR signals is investigated. The different response at low implantation dose caused by B /sup +/ and P /sup +/ ions is analyzed.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6578
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
2010-210.pdf(608KB)期刊论文作者接受稿开放获取View 联系获取全文

作者单位: 中国科学院光电技术研究所

Recommended Citation:
Xianming Liu,Bincheng Li,Qiuping Huang. Ion implantation dose dependence of photocarrier radiometry for thermally annealed silicon wafers[J]. Journal of Physics: Conference Series,2010,214.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Xianming Liu]'s Articles
[Bincheng Li]'s Articles
[Qiuping Huang]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Xianming Liu]‘s Articles
[Bincheng Li]‘s Articles
[Qiuping Huang]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: 2010-210.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Copyright © 2007-2016  中国科学院光电技术研究所 - Feedback
Powered by CSpace