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题名:
IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers
作者: Liu Xianming; Li Bincheng
刊名: Journal of Applied Physics
出版日期: 2009
卷号: 105, 期号:1, 页码:13533
通讯作者: Liu Xianming
文章类型: 期刊论文
中文摘要: We employed Fourier transform variable angle infrared spectroscopic ellipsometry (IRSE) in wavelength range of 2-30 mu m to investigate a group of silicon wafers, which are implanted with high doses and annealed in high temperature. The IRSE spectra for samples with different implantation doses were analyzed physically. When the semiconductor is heavily doped, it becomes degenerated and the doped impurities cannot ionize completely. For the analysis of the IRSE data, we quantitated the ionization probability as a function of impurity concentration in the optical model to describe the carrier concentration profile, by which the impurity concentration and carrier concentration profiles can be determined simultaneously. (C) 2009 American Institute of Physics.
英文摘要: We employed Fourier transform variable angle infrared spectroscopic ellipsometry (IRSE) in wavelength range of 2-30 mu m to investigate a group of silicon wafers, which are implanted with high doses and annealed in high temperature. The IRSE spectra for samples with different implantation doses were analyzed physically. When the semiconductor is heavily doped, it becomes degenerated and the doped impurities cannot ionize completely. For the analysis of the IRSE data, we quantitated the ionization probability as a function of impurity concentration in the optical model to describe the carrier concentration profile, by which the impurity concentration and carrier concentration profiles can be determined simultaneously. (C) 2009 American Institute of Physics.
收录类别: SCI ; Ei
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/6566
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作者单位: 中国科学院光电技术研究所

Recommended Citation:
Liu Xianming,Li Bincheng. IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers[J]. Journal of Applied Physics,2009,105(1):13533.
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