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IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers
Liu Xianming; Li Bincheng
Source PublicationJournal of Applied Physics
Volume105Issue:1Pages:13533
2009
Language英语
Indexed BySCI ; Ei
Subtype期刊论文
AbstractWe employed Fourier transform variable angle infrared spectroscopic ellipsometry (IRSE) in wavelength range of 2-30 mu m to investigate a group of silicon wafers, which are implanted with high doses and annealed in high temperature. The IRSE spectra for samples with different implantation doses were analyzed physically. When the semiconductor is heavily doped, it becomes degenerated and the doped impurities cannot ionize completely. For the analysis of the IRSE data, we quantitated the ionization probability as a function of impurity concentration in the optical model to describe the carrier concentration profile, by which the impurity concentration and carrier concentration profiles can be determined simultaneously. (C) 2009 American Institute of Physics.; We employed Fourier transform variable angle infrared spectroscopic ellipsometry (IRSE) in wavelength range of 2-30 mu m to investigate a group of silicon wafers, which are implanted with high doses and annealed in high temperature. The IRSE spectra for samples with different implantation doses were analyzed physically. When the semiconductor is heavily doped, it becomes degenerated and the doped impurities cannot ionize completely. For the analysis of the IRSE data, we quantitated the ionization probability as a function of impurity concentration in the optical model to describe the carrier concentration profile, by which the impurity concentration and carrier concentration profiles can be determined simultaneously. (C) 2009 American Institute of Physics.
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/6566
Collection薄膜光学技术研究室(十一室)
Corresponding AuthorLiu Xianming
Affiliation中国科学院光电技术研究所
Recommended Citation
GB/T 7714
Liu Xianming,Li Bincheng. IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers[J]. Journal of Applied Physics,2009,105(1):13533.
APA Liu Xianming,&Li Bincheng.(2009).IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers.Journal of Applied Physics,105(1),13533.
MLA Liu Xianming,et al."IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers".Journal of Applied Physics 105.1(2009):13533.
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