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Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2after high temperature oxidation
Li, Yanyue1; Deng, Xiaochuan1; Liu, Yunfeng2; Zhao, Yanli3; Li, Chengzhan3; Chen, Xixi1; Zhang, Bo1
Source PublicationJournal of Semiconductors
Volume36Issue:9
2015
Language英语
ISSN1674-4926
DOI10.1088/1674-4926/36/9/094003
Indexed ByEi
Subtype期刊论文
AbstractThe interface properties of 4H-SiC metal-oxide-semiconductor (MOS) capacitors with post-oxidation annealing (POA) in nitric oxide (NO) ambient after high temperature (1300 °C) oxidation have been investigated using capacitance-voltage (C-V) measurements. The experimental results show that the interface states density (Dit) can be obviously decreased by the POA in NO ambient (NO-POA) and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of Diton POA temperature and time has been also discussed in detail. © 2015 Chinese Institute of Electronics.; The interface properties of 4H-SiC metal-oxide-semiconductor (MOS) capacitors with post-oxidation annealing (POA) in nitric oxide (NO) ambient after high temperature (1300 °C) oxidation have been investigated using capacitance-voltage (C-V) measurements. The experimental results show that the interface states density (Dit) can be obviously decreased by the POA in NO ambient (NO-POA) and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of Diton POA temperature and time has been also discussed in detail. © 2015 Chinese Institute of Electronics.
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/5086
Collection光电探测与信号处理研究室(五室)
Corresponding AuthorDeng, Xiaochuan
Affiliation1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
2. Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China
3. Power Electronics Business Unit, Zhuzhou CSR Times Electric Co., Ltd, Zhuzhou, China
Recommended Citation
GB/T 7714
Li, Yanyue,Deng, Xiaochuan,Liu, Yunfeng,et al. Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2after high temperature oxidation[J]. Journal of Semiconductors,2015,36(9).
APA Li, Yanyue.,Deng, Xiaochuan.,Liu, Yunfeng.,Zhao, Yanli.,Li, Chengzhan.,...&Zhang, Bo.(2015).Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2after high temperature oxidation.Journal of Semiconductors,36(9).
MLA Li, Yanyue,et al."Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2after high temperature oxidation".Journal of Semiconductors 36.9(2015).
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