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题名:
Accurate determination of electronic transport properties of silicon wafers by nonlinear photocarrier radiometry with multiple pump beam sizes
作者: Wang, Qian1,2; Li, Bincheng1,3
刊名: JOURNAL OF APPLIED PHYSICS
出版日期: 2015-12-07
卷号: 118, 期号:21
DOI: 10.1063/1.4936958
文章类型: Article
英文摘要: In this paper, photocarrier radiometry (PCR) technique with multiple pump beam sizes is employed to determine simultaneously the electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) of silicon wafers. By employing the multiple pump beam sizes, the influence of instrumental frequency response on the multi-parameter estimation is totally eliminated. A nonlinear PCR model is developed to interpret the PCR signal. Theoretical simulations are performed to investigate the uncertainties of the estimated parameter values by investigating the dependence of a mean square variance on the corresponding transport parameters and compared to that obtained by the conventional frequency-scan method, in which only the frequency dependences of the PCR amplitude and phase are recorded at single pump beam size. Simulation results show that the proposed multiple-pump-beam-size method can improve significantly the accuracy of the determination of the electronic transport parameters. Comparative experiments with a p-type silicon wafer with resistivity 0.1-0.2 Omega.cm are performed, and the electronic transport properties are determined simultaneously. The estimated uncertainties of the carrier lifetime, diffusion coefficient, and front surface recombination velocity are approximately +/- 10.7%, +/- 8.6%, and +/- 35.4% by the proposed multiple-pump-beam-size method, which is much improved than +/- 15.9%, +/- 29.1%, and >+/- 50% by the conventional frequency-scan method. The transport parameters determined by the proposed multiple-pump-beam-size PCR method are in good agreement with that obtained by a steady-state PCR imaging technique. (C) 2015 AIP Publishing LLC.
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
关键词[WOS]: MODULATED OPTICAL REFLECTANCE ; PHOTOTHERMAL RADIOMETRY ; SI WAFERS ; IMPLANTED SILICON ; CARRIER-LIFETIME ; SEMICONDUCTORS ; SIGNALS
收录类别: SCI
项目资助者: National Science Foundation of China(61076090)
语种: 英语
WOS记录号: WOS:000369918100044
ISSN号: 0021-8979
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3846
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, POB 350, Chengdu 610209, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
3.Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China

Recommended Citation:
Wang, Qian,Li, Bincheng. Accurate determination of electronic transport properties of silicon wafers by nonlinear photocarrier radiometry with multiple pump beam sizes[J]. JOURNAL OF APPLIED PHYSICS,2015,118(21).
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