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题名:
Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging
作者: Wang, Qian1,2; Li, Bincheng1,3
刊名: JOURNAL OF APPLIED PHYSICS
出版日期: 2015-09-28
卷号: 118, 期号:12
DOI: 10.1063/1.4931773
文章类型: Article
英文摘要: Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii. (C) 2015 AIP Publishing LLC.
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
关键词[WOS]: INFRARED PHOTOTHERMAL RADIOMETRY ; SI WAFERS ; PHOTOCONDUCTANCE ; RECOMBINATION
收录类别: SCI
语种: 英语
WOS记录号: WOS:000362565800075
ISSN号: 0021-8979
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3720
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
3.Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China

Recommended Citation:
Wang, Qian,Li, Bincheng. Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging[J]. JOURNAL OF APPLIED PHYSICS,2015,118(12).
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