Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii. (C) 2015 AIP Publishing LLC.
Science & Technology
; Physical Sciences
INFRARED PHOTOTHERMAL RADIOMETRY
; SI WAFERS
1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China 3.Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China
Wang, Qian,Li, Bincheng. Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging[J]. JOURNAL OF APPLIED PHYSICS,2015,118(12).