The annealing temperature dependences of the photocarrier radiometry (PCR) amplitude, the frequency dependences of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze the thermally annealed (C to C) silicon samples with arsenic ion (As implantation of cm dose. The dependence of the carrier effective lifetime on the annealing temperature has been extracted from the normalized quasi-time-domain PCR waveform profiles, and showed to be related to the transient PCR signals. Furthermore, the phenomenon of the reduction of the carrier effective lifetime caused by incomplete annealing (above C and 30 s) of As implanted silicon samples were observed and analyzed.
1.Chinese Acad Sci, Inst Optic & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Chinese Acad Sci, Key Lab Opt Engn, Chengdu 610209, Sichuan, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
Ren, Shengdong,Li, Bincheng,Wang, Qian. Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2015,36(5-6):1045-1050.