IOE OpenIR  > 光电技术研究所被WoS收录文章
Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers
Ren, Shengdong1,2,3; Li, Bincheng1,2; Wang, Qian1,2,3
Source PublicationINTERNATIONAL JOURNAL OF THERMOPHYSICS
Volume36Issue:5-6Pages:1045-1050
2015-06-01
Language英语
Indexed BySCI
WOS IDWOS:000356611100032
SubtypeArticle
AbstractThe annealing temperature dependences of the photocarrier radiometry (PCR) amplitude, the frequency dependences of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze the thermally annealed (C to C) silicon samples with arsenic ion (As implantation of cm dose. The dependence of the carrier effective lifetime on the annealing temperature has been extracted from the normalized quasi-time-domain PCR waveform profiles, and showed to be related to the transient PCR signals. Furthermore, the phenomenon of the reduction of the carrier effective lifetime caused by incomplete annealing (above C and 30 s) of As implanted silicon samples were observed and analyzed.
KeywordCarrier Effective Lifetime Photocarrier Radiometry Silicon Thermal Annealing
WOS KeywordSI
WOS Research AreaThermodynamics ; Chemistry ; Mechanics ; Physics
WOS SubjectThermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/3665
Collection光电技术研究所被WoS收录文章
Affiliation1.Chinese Acad Sci, Inst Optic & Elect, Chengdu 610209, Sichuan, Peoples R China
2.Chinese Acad Sci, Key Lab Opt Engn, Chengdu 610209, Sichuan, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Ren, Shengdong,Li, Bincheng,Wang, Qian. Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2015,36(5-6):1045-1050.
APA Ren, Shengdong,Li, Bincheng,&Wang, Qian.(2015).Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers.INTERNATIONAL JOURNAL OF THERMOPHYSICS,36(5-6),1045-1050.
MLA Ren, Shengdong,et al."Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers".INTERNATIONAL JOURNAL OF THERMOPHYSICS 36.5-6(2015):1045-1050.
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