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题名:
Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation
作者: Wang, Qian1,2; Li, Bincheng1; Ren, Shengdong1,2; Wang, Qiang1
刊名: INTERNATIONAL JOURNAL OF THERMOPHYSICS
出版日期: 2015-06-01
卷号: 36, 期号:5-6, 页码:1173-1180
关键词: Ion implantation ; Laser irradiation ; Photocarrier radiometry ; Silicon ; Ultra-shallow junction
文章类型: Article
英文摘要: The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193 nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated.
WOS标题词: Science & Technology ; Physical Sciences ; Technology
类目[WOS]: Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied
研究领域[WOS]: Thermodynamics ; Chemistry ; Mechanics ; Physics
关键词[WOS]: BORON
收录类别: SCI
语种: 英语
WOS记录号: WOS:000356611100050
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3663
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China

Recommended Citation:
Wang, Qian,Li, Bincheng,Ren, Shengdong,et al. Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2015,36(5-6):1173-1180.
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