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题名:
Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption
作者: Zhang, Xiren; Li, Bincheng; Liu, Xianming
刊名: JOURNAL OF APPLIED PHYSICS
出版日期: 2008-11-15
卷号: 104, 期号:10
关键词: carrier lifetime ; elemental semiconductors ; silicon ; surface recombination
文章类型: Article
英文摘要: Computer simulations are carried out to investigate the sensitivity of simultaneous determination of three electronic transport properties (carrier lifetime, carrier diffusivity, and front surface recombination velocity) of silicon wafers by modulated free carrier absorption (MFCA) via a multiparameter fitting procedure. The relative accuracy of the transport parameter determination by laterally resolved MFCA (LR-MFCA), in which the amplitude and phase are measured as functions of the pump-probe-beam separation at several modulation frequencies covering an appropriate range, and by conventional frequency-scan MFCA (FS-MFCA), in which only the modulation frequency dependences of the amplitude and phase are recorded, is theoretically analyzed and experimentally estimated by calculating the dependence of the mean square variance on individual transport parameter via a multiparameter estimation process. Simulated and experimental results show that the determination of the transport properties of silicon wafers by LR-MFCA are more accurate, compared with that by FS-MFCA. Comparative experiments are performed with a silicon wafer and the estimated uncertainties of the carrier diffusivity; lifetime and front surface recombination velocity are approximately +/- 3.7%, +/- 25%, and +/- 35% for LR-MFCA and +/- 7.5%, +/- 31%, and +/- 24% for FS-MFCA, respectively.
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
关键词[WOS]: PHOTOTHERMAL RADIOMETRY ; RECOMBINATION VELOCITIES ; SENSITIVITY-ANALYSIS ; OPTICAL REFLECTANCE ; SILICON-WAFERS ; MICROSCOPY ; INTERFACE ; SURFACE ; BULK ; SEPARATION
收录类别: SCI
语种: 英语
WOS记录号: WOS:000262605800071
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3649
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China

Recommended Citation:
Zhang, Xiren,Li, Bincheng,Liu, Xianming. Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption[J]. JOURNAL OF APPLIED PHYSICS,2008,104(10).
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