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Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption
Zhang, Xiren; Li, Bincheng; Liu, Xianming
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume104Issue:10
2008-11-15
Language英语
Indexed BySCI
WOS IDWOS:000262605800071
SubtypeArticle
AbstractComputer simulations are carried out to investigate the sensitivity of simultaneous determination of three electronic transport properties (carrier lifetime, carrier diffusivity, and front surface recombination velocity) of silicon wafers by modulated free carrier absorption (MFCA) via a multiparameter fitting procedure. The relative accuracy of the transport parameter determination by laterally resolved MFCA (LR-MFCA), in which the amplitude and phase are measured as functions of the pump-probe-beam separation at several modulation frequencies covering an appropriate range, and by conventional frequency-scan MFCA (FS-MFCA), in which only the modulation frequency dependences of the amplitude and phase are recorded, is theoretically analyzed and experimentally estimated by calculating the dependence of the mean square variance on individual transport parameter via a multiparameter estimation process. Simulated and experimental results show that the determination of the transport properties of silicon wafers by LR-MFCA are more accurate, compared with that by FS-MFCA. Comparative experiments are performed with a silicon wafer and the estimated uncertainties of the carrier diffusivity; lifetime and front surface recombination velocity are approximately +/- 3.7%, +/- 25%, and +/- 35% for LR-MFCA and +/- 7.5%, +/- 31%, and +/- 24% for FS-MFCA, respectively.
KeywordCarrier Lifetime Elemental Semiconductors Silicon Surface Recombination
WOS KeywordPHOTOTHERMAL RADIOMETRY ; RECOMBINATION VELOCITIES ; SENSITIVITY-ANALYSIS ; OPTICAL REFLECTANCE ; SILICON-WAFERS ; MICROSCOPY ; INTERFACE ; SURFACE ; BULK ; SEPARATION
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/3649
Collection光电技术研究所被WoS收录文章
AffiliationChinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Xiren,Li, Bincheng,Liu, Xianming. Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption[J]. JOURNAL OF APPLIED PHYSICS,2008,104(10).
APA Zhang, Xiren,Li, Bincheng,&Liu, Xianming.(2008).Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption.JOURNAL OF APPLIED PHYSICS,104(10).
MLA Zhang, Xiren,et al."Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption".JOURNAL OF APPLIED PHYSICS 104.10(2008).
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