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题名:
Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers
作者: Gao, C.1,2; Li, B.1; Zhang, X.1
刊名: EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS
出版日期: 2008
卷号: 153, 页码:275-277
文章类型: Article
英文摘要: A time-domain modulated free-carrier absorption (MFCA) is developed both experimentally and theoretically to investigate the photo-carrier dynamics of silicon wafers illuminated by a square-wave-modulated super-band-gap laser beam. An explicit three-dimensional (3-D) theoretical expression for the temporal behavior of the MFCA signal is obtained by solving a 3-D carrier-diffusion equation The time-domain MFCA model is used to fit the experimental MFCA signals of p- and n-type Si wafers via a multi-parameter fitting procedure to determine simultaneously the electronic transport properties, that is, the bulk lifetime, the ambipolor diffusivity, and the front surface recombination velocity. The uncertainties of the fitted parameter values are estimated.
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Multidisciplinary
研究领域[WOS]: Physics
收录类别: ISTP ; SCI
语种: 英语
WOS记录号: WOS:000254041300063
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3621
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
2.Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China

Recommended Citation:
Gao, C.,Li, B.,Zhang, X.. Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers[J]. EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS,2008,153:275-277.
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