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Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers
Gao, C.1,2; Li, B.1; Zhang, X.1
Source PublicationEUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS
Volume153Pages:275-277
2008
Language英语
Indexed ByISTP ; SCI
WOS IDWOS:000254041300063
SubtypeArticle
AbstractA time-domain modulated free-carrier absorption (MFCA) is developed both experimentally and theoretically to investigate the photo-carrier dynamics of silicon wafers illuminated by a square-wave-modulated super-band-gap laser beam. An explicit three-dimensional (3-D) theoretical expression for the temporal behavior of the MFCA signal is obtained by solving a 3-D carrier-diffusion equation The time-domain MFCA model is used to fit the experimental MFCA signals of p- and n-type Si wafers via a multi-parameter fitting procedure to determine simultaneously the electronic transport properties, that is, the bulk lifetime, the ambipolor diffusivity, and the front surface recombination velocity. The uncertainties of the fitted parameter values are estimated.
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/3621
Collection光电技术研究所被WoS收录文章
Affiliation1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
2.Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China
Recommended Citation
GB/T 7714
Gao, C.,Li, B.,Zhang, X.. Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers[J]. EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS,2008,153:275-277.
APA Gao, C.,Li, B.,&Zhang, X..(2008).Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers.EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS,153,275-277.
MLA Gao, C.,et al."Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers".EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS 153(2008):275-277.
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