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题名:
RET simulations for SLM-based maskless lithography
作者: Guo, XlaoWei1,2; Du, Jinglei2; Luo, Xiangang3; Deng, Qiling3; Du, Chunlei3
刊名: MICROELECTRONIC ENGINEERING
出版日期: 2008-05-01
卷号: 85, 期号:5-6, 页码:929-933
关键词: optical maskless lithography ; spatial light modulator ; reticle enhancement technique
文章类型: Article
英文摘要: In this paper, we have preformed some simulations of reticle enhancement techniques (RET) for SLM-based maskless lithography. Our results show that, on the one hand, increased slope and larger process window can be simultaneously obtained by overtilting some mirrors around the printed structure; On the other hand, fully making use of the grayscaling generated by tilting a mirror across it, a maskless tool can use the same OPC model as a mask-based scanner, such as gray level serifs, sub-resolution scatter bars, transmittance controlled mask, and so on. The results also imply that optical maskless lithography (OML) provides the ability in attaining high resolution comparable to the mask-based lithography. (c) 2008 Elsevier B.V. All rights reserved.
WOS标题词: Science & Technology ; Technology ; Physical Sciences
类目[WOS]: Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied
研究领域[WOS]: Engineering ; Science & Technology - Other Topics ; Optics ; Physics
关键词[WOS]: OPTICAL PROXIMITY CORRECTION ; DESIGN ; MICROLITHOGRAPHY ; FABRICATION
收录类别: SCI ; ISTP
语种: 英语
WOS记录号: WOS:000257413400048
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3603
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China
2.Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China
3.CAS, Inst Opt & Elect, Chengdu 610209, Peoples R China

Recommended Citation:
Guo, XlaoWei,Du, Jinglei,Luo, Xiangang,et al. RET simulations for SLM-based maskless lithography[J]. MICROELECTRONIC ENGINEERING,2008,85(5-6):929-933.
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