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题名:
193 nm interference nanolithography based on SPP
作者: Xiong, Wei1; Du, Jinglei1; Fang, Liang1; Luo, Xiangang2; Deng, Qiling2; Du, Chunlei2
刊名: MICROELECTRONIC ENGINEERING
出版日期: 2008-05-01
卷号: 85, 期号:5-6, 页码:754-757
关键词: 193 nm-interference nanolithography ; SPP ; sub-wavelength pattern ; FDTD
文章类型: Article
英文摘要: Large-area surface plasmon polariton interference lithography (LSPPIL) is a promising nano-fabrication technique for making periodic nano-patterns. In this paper, for reducing further the feature size of a lithography pattern, we propose to use 193 nm illumination wavelength in LSPPIL and replace the silver coating by tungsten. Theoretical analysis and preliminary numerical simulations indicate that 193 nm-LSPPIL can produce periodic patterns with a critical dimension as small as 30 nm with high contrast and enough long exposure depth. 193 nm interference nanolithography based on SPP has the potential to realize the 32 nm node periodic nano-structure manufacture. (C) 2008 Elsevier B.V. All rights reserved.
WOS标题词: Science & Technology ; Technology ; Physical Sciences
类目[WOS]: Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied
研究领域[WOS]: Engineering ; Science & Technology - Other Topics ; Optics ; Physics
关键词[WOS]: PLASMON-ASSISTED NANOLITHOGRAPHY
收录类别: SCI ; ISTP
语种: 英语
WOS记录号: WOS:000257413400006
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3599
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China
2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China

Recommended Citation:
Xiong, Wei,Du, Jinglei,Fang, Liang,et al. 193 nm interference nanolithography based on SPP[J]. MICROELECTRONIC ENGINEERING,2008,85(5-6):754-757.
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